MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA35H1516M
BLOCK DIAGRAM
2
3
RoHS Compliance ,
154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA35H1516M is a 40-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 154- to
162-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>40W,
η
T
>50% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA35H1516M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA35H1516M-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA35H1516M
MITSUBISHI ELECTRIC
1/8
13 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA35H1516M
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=154-162MHz,
Z
G
=Z
L
=50Ω
RATING
17
6
100
50
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
154
40
TYP
MAX
162
UNIT
MHz
W
%
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
50
-50
3:1
1
dBc
—
mA
—
—
V
DD
=8.0-15.2V, P
in
=25-70mW,
P
out
<50W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=40W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA35H1516M
MITSUBISHI ELECTRIC
2/8
13 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA35H1516M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
60
OUTPUT POWER P
out
(W)
INPUT VSWR
ρ
in
(-)
50
40
30
20
10
0
150
η
t @P
out
=30W
V
DD
=12.5V
P
in
=50mW
P
out
@V
GG
=5V
2
nd
, 3
rd
HARMONICS versus FREQUENCY
-20
TOTAL EFFICIENCY
η
T
(%)
HARMONICS (dBc)
-30
-40
-50
-60
3
rd
2
nd
V
DD
=12.5V
P
in
=50mW
Pout=30W @V
GG
control
120
100
80
60
40
20
0
170
ρ
in
@P
out
=30W
155
160
165
FREQUENCY f(MHz)
-70
150
155
160
165
FREQUENCY f(MHz)
170
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
DRAIN CURRENT
I
DD
(A)
50
40
30
I
DD
P
out
Gp
12
10
8
6
4
I
DD
f=154MHz,
V
DD
=12.5V,
V
GG
=5V
12
DRAIN CURRENT
10
8
6
4
f=162MHz,
V
DD
=12.5V,
V
GG
=5V
40
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
2
0
2
0
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
OUTPUT POWER P
out
(W)
50
40
P
out
f=154MHz,
V
DD
=12.5V,
V
GG
=5V
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
50
40
30
20
10
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
I
DD
f=162MHz,
V
DD
=12.5V,
V
GG
=5V
12
10
8
6
I
DD
12
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
10
P
out
8
6
4
2
0
30
20
10
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
I
DD
f=154MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
I
DD
f=162MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
12
10
8
6
4
2
0
12
10
8
6
4
2
0
RA35H1516M
MITSUBISHI ELECTRIC
3/8
I
DD
(A)
13 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA35H1516M
OUTLINE DRAWING
(mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
60.0 ±0.5
51.5 ±0.5
2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5
1
2
3
4
14.0 ±1
2.0 ±0.5
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(50.4)
2.3 ±0.3
4.0 ±0.3
(9.88)
RA35H1516M
MITSUBISHI ELECTRIC
4/8
17.0 ±0.5
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
13 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA35H1516M
TEST BLOCK DIAGRAM
Power
Meter
1
2
DUT
3
4
5
Spectrum
Analyzer
Signal
Generator
Attenuator
Pre-
amplifier
Attenuator
Directional
Coupler
Z
G
=50Ω
Z
L
=50Ω
Directional
Coupler
Attenuator
Power
Meter
C1
C2
-
+
DC Power
Supply V
GG
C1, C2: 4700pF, 22uF in parallel
+
-
DC Power
Supply V
DD
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
2
3
1
4
5
RA35H1516M
MITSUBISHI ELECTRIC
5/8
13 Jan 2006
微控制器 MCU
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