MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H3340M
BLOCK DIAGRAM
RoHS Compliance ,
330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H3340M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>30W,
η
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA30H3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA30H3340M-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H3340M
MITSUBISHI ELECTRIC
1/7
1 Aug 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA30H3340M
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=330-400MHz,
Z
G
=Z
L
=50Ω
RATING
17
6
100
45
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
Above Parameters are guaranteed independently
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
330
30
TYP
MAX
400
UNIT
MHz
W
%
V
DD
=12.5V,
V
GG
=5V,
P
in
=50mW
40
-25
3:1
1
Harmonic
dBc
—
mA
—
—
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<40W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=30W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or destroy
All Parameters, Conditions, Ratings and Limits are subject to change without notice
RA30H3340M
MITSUBISHI ELECTRIC
2/7
1 Aug 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA30H3340M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY
and INPUT VSWR versus FREQUENCY
TOTAL EFFICIENCY
η
T
(%)
P
out
@V
GG
=5V
100
80
η
T
@ P
out
=30W (V
GG
control)
60
40
ρ
in
@ P
out
=30W (V
GG
control)
450
470
490
510
530
20
0
FREQUENCY f (MHz)
OUTPUT POWER P
out
(W)
V
DD
=12.5V,
P
in
=50mW
50
INPUT VSWR
ρ
in
40
30
20
10
0
430
30
20
10
0
0
20
40
60
η
T
60
40
20
0
100
f=440MHz,
V
DD
=12.5V,
V
GG
=5V
80
INPUT POWER P
in
(mW)
OUTPUT POWER and TOTAL EFFICIENCY
versus INPUT POWER
50
100
TOTAL EFFICIENCY
η
T
(%)
OUTPUT POWER P
out
(W)
OUTPUT POWER P
out
(W)
40
30
η
T
20
10
0
0
20
40
60
f=480MHz,
V
DD
=12.5V,
V
GG
=5V
OUTPUT POWER and TOTAL EFFICIENCY
versus INPUT POWER
100
50
P
out
40
30
20
10
0
0
20
40
60
η
T
80
60
40
f=520MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
80
60
40
20
0
100
20
0
100
80
80
INPUT POWER P
in
(mW)
INPUT POWER P
in
(mW)
TOTAL EFFICIENCY
η
T
(%)
50
40
30
20
10
0
2
2.5
3
3.5
4
P
out
100
80
η
T
f=440MHz,
V
DD
=12.5V,
P
in
=50mW
50
40
30
20
10
0
0
2
4
520MHz
100
80
η
T
60
40
V
GG
=5V,
P
in
=50mW
60
40
20
0
20
0
6
8
10 12 14 16 18
4.5
5
5.5
6
DRAIN VOLTAGE V
DD
(V)
GATE VOLTAGE V
GG
(V)
OUTPUT POWER and TOTAL EFFICIENCY
versus GATE VOLTAGE
60
TOTAL EFFICIENCY
η
T
(%)
OUTPUT POWER P
out
(W)
OUTPUT POWER P
out
(W)
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
5
5.5
6
GATE VOLTAGE V
GG
(V)
RA30H3340M
η
T
f=480MHz,
V
DD
=12.5V,
P
in
=50mW
OUTPUT POWER and TOTAL EFFICIENCY
versus GATE VOLTAGE
60
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
5
5.5
6
GATE VOLTAGE V
GG
(V)
η
T
f=520MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
100
80
60
40
20
0
100
P
out
80
60
40
20
0
MITSUBISHI ELECTRIC
3/7
1 Aug 2006
TOTAL EFFICIENCY
η
T
(%)
TOTAL EFFICIENCY
η
T
(%)
OUTPUT POWER P
out
(W)
OUTPUT POWER P
out
(W)
OUTPUT POWER and TOTAL EFFICIENCY
versus DRAIN VOLTAGE
70
440MHz
P
out
480MHz
60
OUTPUT POWER and TOTAL EFFICIENCY
versus GATE VOLTAGE
60
TOTAL EFFICIENCY
η
T
(%)
TOTAL EFFICIENCY
η
T
(%)
60
OUTPUT POWER P
out
(W)
OUTPUT POWER and TOTAL EFFICIENCY
versus INPUT POWER
100
50
P
out
80
40
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