Ordering number : ENN7613
2SC5957
NPN Triple Diffused Planar Silicon Transistor
2SC5957
Switching Regulator Applications
Features
•
•
•
•
Package Dimensions
unit : mm
2010C
[2SC5957]
10.2
3.6
5.1
2.7
6.3
4.5
1.3
High breakdown voltage and high reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
18.0
5.6
1.2
14.0
0.8
15.1
0.4
1 2 3
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW≤300µs, duty cycle≤10%
Conditions
2.55
2.55
2.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
Ratings
500
400
7
10
20
3.5
1.75
Unit
V
V
V
A
A
A
W
W
°C
°C
Tc=25°C
50
150
--55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=400V, IE=0
VEB=5V, IC=0
Ratings
min
typ
max
10
10
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31504KB TS IM TA-100659 No.7613-1/4
2SC5957
Continued from preceding page.
Parameter
Symbol
hFE1
hFE2
hFE3
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
M
20 to 40
N
30 to 50
Conditions
VCE=5V, IC=1.2A
VCE=5V, IC=6A
VCE=5V, IC=1mA
VCE=10V, IC=1.2A
VCB=10V, f=1MHz
IC=6A, IB=1.2A
IC=6A, IB=1.2A
IC=1mA, IE=0
IC=5mA, RBE=∞
IE=1mA, IC=0
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
500
400
7
0.5
2.5
0.3
Ratings
min
20*
10
10
15
80
0.8
1.5
MHz
pF
V
V
V
V
V
µs
µs
µs
typ
max
50*
Unit
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
* : The hFE1 of the 2SC5957 is classified as follows.
Rank
hFE
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=200V
RB
RL
10
9
IC -- VCE
900
100
0m
A
mA
800mA
8
7
IC -- VBE(on)
VCE=5V
Collector Current, IC -- A
Collector Current, IC -- A
8
7
6
5
4
700mA
600mA
500mA
400mA
300mA
200mA
6
5
4
25
°
C
2
1
2
1
0
0
1
2
3
4
5
6
7
8
IB=0
9
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT05153
Collector-to-Emitter Voltage, VCE -- V
100
7
5
IT05069
3
2
hFE -- IC
VCE=5V
Ta=120
°C
25
°
C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter ON-State Voltage, VBE(on) -- V
VCE(sat) -- IC
Ta=
12
3
--40
°
C
100mA
0
°
C
3
IC / IB=5
1.0
5
DC Current Gain, hFE
Ta
3
3
3
2
0.1
7
5
3
2
2
--40
°
C
Ta= --40
°C
120°C
10
7
5
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5 7 10
IT05155
0.01
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
--4
5
7 10
IT05156
Collector Current, IC -- A
No.7613-2/4
0
°
25°C
C
25
°
C
=1
20
°
C
7
2SC5957
10
7
VBE(sat) -- IC
IC / IB=5
10
7
5
SW Time -- IC
VCC=200V
IC/IB=5
IB2/IB1= --2.5
R load
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Switching Time, SW Time --
µs
5
3
2
3
2
tstg
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.1
2
3
5
7 1.0
2
3
5
1.0
7
5
3
2
25°C
Ta= --40
°C
120
°
C
tf
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5
3
2
5 7 10
IT05154
7
10
2
3
Forward Bias ASO
Collector Current, IC -- A
5
IT05924
Reverse Bias ASO
ICP=20A
IC=10A
≤50µs
3
2
ICP
10
Collector Current, IC -- A
DC
Collector Current, IC -- A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
s
0
µ
op
era
tio
n
10
7
5
3
2
1.0
7
5
3
1m
s
10
m
s
S/
B
m
Li
ite
d
0.01
1.0
Tc=25°C
Single pulse
2
3
5
7 10
2
3
5
7 100
2
3
5
7
2
0.1
1.0
Tc=25°C
IB2= --1.8A Const
L=100µH
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05075
Collector-to-Emitter Voltage, VCE -- V
2.5
IT06390
60
PC -- Ta
Collector-to-Emitter Sustain Voltage, VCEX(sus) -- V
PC -- Tc
Collector Dissipation, PC -- W
2.0
1.75
1.5
Collector Dissipation, PC -- W
50
40
No
1.0
he
at
sin
k
30
20
0.5
10
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT05866
Case Temperature, Tc --
°C
IT05867
No.7613-3/4
2SC5957
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2004. Specifications and information herein are subject
to change without notice.
PS No.7613-4/4
能源基础设施
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