MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07M3340M
BLOCK DIAGRAM
2
3
RoHS Compliance ,
330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M3340M is a 7-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=7.2V, V
GG
=0V)
• P
out
>7W @ V
DD
=7.2V, V
GG
=3.5V, P
in
=50mW
•
η
T
>40% @ P
out
=6.5W (V
GG
control), V
DD
=7.2V, P
in
=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H46S
RoHS COMPLIANCE
• RA07M3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA07M3340M-101
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA07M3340M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA07M3340M
RATING
9.2
4
70
10
-30 to +90
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<3.5V
V
DD
<7.2V, P
in
=0mW
f=330-400MHz,
Z
G
=Z
L
=50Ω
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
V
DD
=7.2V,V
GG
=3.5V, P
in
=50mW
P
out
=6.5W (V
GG
control),
V
DD
=7.2V,
P
in
=50mW
MIN
330
7
40
TYP
MAX
400
UNIT
MHz
W
%
Harmonic
-25
4:1
1
dBc
—
mA
—
—
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=4.0-9.2V, P
in
=25-70mW, P
out
<8W (V
GG
control),
Load VSWR=4:1
V
DD
=9.2V, P
in
=50mW, P
out
=7.0W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA07M3340M
MITSUBISHI ELECTRIC
2/8
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA07M3340M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
10
9
OUTPUT POWER P
out
(W)
INPUT VSWR
ρ
in
(-)
8
7
6
5
4
3
2
1
ρ
in
@P
out
=6.5W
V
DD
=7.2V
P
in
=50mW
P
out
@V
GG
=3.5V
2
nd
, 3
rd
HARMONICS versus FREQUENCY
100
90
TOTAL EFFICIENCY
η
T
(%)
80
70
HARMONICS (dBc)
-30
-40
-50
-60
3
rd
@P
out
=6.5W
2
nd
@P
out
=6.5W
-20
V
DD
=7.2V
P
in
=50mW
η
T
@P
out
=6.5W
60
50
40
30
20
10
0
0
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
-70
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
40
30
20
I
DD
f=330MHz,
V
DD
=7.2V,
V
GG
=3.5V
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
10
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
8
DRAIN CURRENT
I
DD
(A)
6
4
2
0
50
40
30
20
I
DD
f=350MHz,
V
DD
=7.2V,
V
GG
=3.5V
Gp
P
out
10
8
6
4
2
0
-10
-5
0
5
10
INPUT POWER P
in
(dBm)
15
20
DRAIN CURRENT
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
10
0
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
40
30
20
I
DD
Gp
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
10
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
20
10
0
-10
-5
0
5
10
INPUT POWER P
in
(dBm)
15
20
f=400MHz,
V
DD
=7.2V,
V
GG
=3.5V
Gp
P
out
f=380MHz,
V
DD
=7.2V,
V
GG
=3.5V
10
8
6
4
I
DD
P
out
8
DRAIN CURRENT
I
DD
(A)
6
4
2
0
DRAIN CURRENT
8
6
4
2
0
10
0
-10
-5
0
5
10
INPUT POWER P
in
(dBm)
15
20
2
0
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
OUTPUT POWER P
out
(W)
14
12
10
8
6
4
2
0
2
3
4
5
6
7
8
DRAIN VOLTAGE V
DD
(V)
9
10
0
2
I
DD
f=330MHz,
V
GG
=3.5V,
P
in
=50mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
8
OUTPUT POWER P
out
(W)
16
14
12
10
8
6
4
2
0
2
3
4
5
6
7
8
DRAIN VOLTAGE V
DD
(V)
9
10
I
DD
f=350MHz,
V
GG
=3.5V,
P
in
=50mW
P
out
DRAIN CURRENT I
DD
(A)
4
RA07M3340M
MITSUBISHI ELECTRIC
3/8
DRAIN CURRENT I
DD
(A)
6
I
DD
(A)
24 Jan 2006
I
DD
(A)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA07M3340M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
OUTPUT POWER P
out
(W)
14
12
10
8
I
DD
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
8
OUTPUT POWER P
out
(W)
16
14
12
10
8
6
4
2
0
2
3
4
5
6
7
8
DRAIN VOLTAGE V
DD
(V)
9
10
0
2
I
DD
f=400MHz,
V
GG
=3.5V,
P
in
=50mW
DRAIN CURRENT I
DD
(A)
P
out
P
out
4
4
6
4
2
0
2
3
4
5
6
7
8
DRAIN VOLTAGE V
DD
(V)
9
10
0
2
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
OUTPUT POWER P
out
(W)
10
8
6
4
2
0
2
2.5
3
3.5
GATE VOLTAGE V
GG
(V)
4
I
DD
f=330MHz,
V
DD
=7.2V,
P
in
=50mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
6
OUTPUT POWER P
out
(W)
5
DRAIN CURRENT I
DD
(A)
4
3
2
1
0
12
10
8
I
DD
f=350MHz,
V
DD
=7.2V,
P
in
=50mW
P
out
6
5
4
3
2
1
0
2
2.5
3
3.5
GATE VOLTAGE V
GG
(V)
4
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
6
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
OUTPUT POWER P
out
(W)
10
8
I
DD
f=380MHz,
V
DD
=7.2V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
6
OUTPUT POWER P
out
(W)
5
4
3
2
1
0
DRAIN CURRENT I
DD
(A)
12
10
8
I
DD
f=400MHz,
V
DD
=7.2V,
P
in
=50mW
P
out
6
5
4
3
2
1
0
2
2.5
3
3.5
GATE VOLTAGE V
GG
(V)
4
P
out
6
4
2
0
2
2.5
3
3.5
GATE VOLTAGE V
GG
(V)
4
6
4
2
0
RA07M3340M
MITSUBISHI ELECTRIC
4/8
DRAIN CURRENT I
DD
(A)
f=380MHz,
V
GG
=3.5V,
P
in
=50mW
8
6
6
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA07M3340M
OUTLINE DRAWING
(mm)
30.0
±0.2
(1.7)
(4.4)
26.6
±0.2
21.2
±0.2
2-R1.5
±0.1
3.0
±0.2
10.0
±0.2
6.0
±0.2
6.0
±0.2
Ø0.45
±0.15
1
2
3
4
6.0
±1
6.1
±1
13.7
±1
18.8
±1
23.9
±1
3.5
±0.2
(5.4)
2.3
±0.4
0.05 +0.04/-0
(19.2)
1.5
±0.2
3.0
±0.2
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
RA07M3340M
MITSUBISHI ELECTRIC
5/8
7.4
±0.2
5
24 Jan 2006
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