NSS40600CF8T1G,
SNSS40600CF8T1G
40 V, 7.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
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−40
VOLTS, 7.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
45 mW
ChipFET]
CASE 1206A
STYLE 4
COLLECTOR
1, 2, 3, 6, 7, 8
4
BASE
5
EMITTER
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These are Pb−Free Devices*
MARKING DIAGRAM
VA M
G
VA = Specific Device Code
M = Month Code
G
= Pb−Free Package
PIN CONNECTIONS
C
C
C
E
8
7
6
5
1
2
3
4
C
C
C
B
ORDERING INFORMATION
Device
NSS40600CF8T1G
SNSS40600CF8T1G
Package
ChipFET
(Pb−Free)
ChipFET
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSS40600CF8/D
March, 2013
−
Rev. 4
1
NSS40600CF8T1G, SNSS40600CF8T1G
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−40
−40
−7.0
−6.0
−7.0
HBM Class 3B
MM Class C
Unit
Vdc
Vdc
Vdc
Adc
A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec)
Junction and Storage Temperature Range
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
R
qJA
(Note 2)
R
qJL
(Note 2)
P
Dsingle
(Notes 2 & 3)
T
J
, T
stg
Max
830
6.7
150
1.4
11.1
90
15
2.75
−55
to +150
Unit
mW
mW/°C
°C/W
W
mW/°C
°C/W
°C/W
W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−4 @ 100 mm
2
, 1 oz copper traces.
2. FR−4 @ 500 mm
2
, 1 oz copper traces.
3. Thermal response.
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2
NSS40600CF8T1G, SNSS40600CF8T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−0.1
mAdc, I
E
= 0)
Emitter−Base Breakdown Voltage
(I
E
=
−0.1
mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
=
−40
Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
=
−7.0
Vdc)
Collector Cutoff Current
(V
CB
=
−6.5
Vdc, V
BE(off)
= 0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
=
−10
mA, I
C
=
−2.0
V)
(I
C
=
−500
mA, V
CE
=
−2.0
V)
(I
C
=
−1.0
A, V
CE
=
−2.0
V)
(I
C
=
−2.0
A, V
CE
=
−2.0
V)
(I
C
=
−3.0
A, V
CE
=
−2.0
V)
Collector
−Emitter
Saturation Voltage (Note 4)
(I
C
=
−0.1
A, I
B
=
−0.010
A) (Note 5)
(I
C
=
−1.0
A, I
B
=
−0.100
A)
(I
C
=
−1.0
A, I
B
=
−0.010
A)
(I
C
=
−2.0
A, I
B
=
−0.020
A)
(I
C
=
−3.0
A, I
B
=
−0.030
A)
(I
C
=
−4.0
A, I
B
=
−0.400
A)
Base
−Emitter
Saturation Voltage (Note 4)
(I
C
=
−1.0
A, I
B
=
−0.01
A)
Base
−Emitter
Turn−on Voltage (Note 4)
(I
C
=
−2.0
A, V
CE
=
−3.0
V)
Cutoff Frequency
(I
C
=
−100
mA, V
CE
=
−5.0
V, f = 100 MHz)
Input Capacitance (V
EB
=
−0.5
V, f = 1.0 MHz)
Output Capacitance (V
CB
=
−3.0
V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
Rise (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
Storage (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
Fall (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
4. Pulsed Condition: Pulse Width = 300
msec,
Duty Cycle
≤
2%.
5. Guaranteed by design but not tested.
t
d
t
r
t
s
t
f
−
−
−
−
−
−
−
−
120
220
650
240
ns
ns
ns
ns
h
FE
250
250
220
180
150
−
−
−
−
−
−
−
−
100
−
−
−
−
300
−
−
0.007
0.045
0.080
0.150
0.180
0.160
−
−
−
−
−
−
−
−
−
−
−0.010
−0.075
−0.110
−0.200
−0.250
−0.220
−0.90
−0.90
−
650
150
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
I
CEO
−40
−40
−7.0
−
−
−
−
−
−
−
−
−
−
−
−
−0.1
−0.1
−10
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typical
Max
Unit
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
Cibo
Cobo
V
V
MHz
pF
pF
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3
NSS40600CF8T1G, SNSS40600CF8T1G
0.25
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
= 150°C
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
0.20
0.15
25°C
0.10
−55°C
0.05
0
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.001
0.01
0.1
1.0
10
−55°C
I
C
/I
B
= 100
V
CE(sat)
= 150°C
25°C
0.001
0.01
0.1
1.0
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
750
V
BE(sat)
, BASE EMITTER
SATURATION VOLTAGE (V)
650
h
FE
, DC CURRENT GAIN
550
450
350
250
150
50
0.001
0.01
150°C (5 V)
150°C (2 V)
25°C (5 V)
25°C (2 V)
−55°C
(5 V)
−55°C
(2 V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
1.0
10
0.2
I
C
/I
B
= 10
−55°C
25°C
150°C
0.001
0.01
0.1
1.0
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs.
Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
V
BE(on)
, BASE EMITTER TURN−ON VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.001
0.01
0.1
1.0
10
150°C
25°C
V
CE
=
−1.0
V
−55°C
1.0
0.8
10 mA
100 mA
I
C
= 500 mA
300 mA
0.6
0.4
0.2
0
0.01
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
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4
Figure 6. Saturation Region
NSS40600CF8T1G, SNSS40600CF8T1G
750
C
ibo
, INPUT CAPACITANCE (pF)
700
650
600
550
500
450
400
350
300
0
1.0
2.0
3.0
4.0
5.0
6.0
C
ibo
(pF)
C
obo
, OUTPUT CAPACITANCE (pF)
225
200
175
150
125
100
75
50
0
5.0
10
15
20
25
30
35
C
obo
(pF)
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1.0
I
C
(A)
1.0 mS
10 mS
100 mS
1.0 S
Thermal
Limit
0.01
0.1
1.0
V
CE
(V
dc
)
10
100
0.1
0.01
Figure 9. Safe Operating Area
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5
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