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NSS40500UW3T2G_07

产品描述5000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
产品类别半导体    分立半导体   
文件大小102KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

NSS40500UW3T2G_07概述

5000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR

5000 mA, 40 V, PNP, 硅, 小信号晶体管

NSS40500UW3T2G_07规格参数

参数名称属性值
端子数量3
晶体管极性PNP
最大导通时间220 ns
最大关断时间760 ns
最大集电极电流5 A
最大集电极发射极电压40 V
加工封装描述LEAD FREE, MINIATURE, CASE 506AU-01, WDFN3, 3 PIN
无铅Yes
欧盟RoHS规范Yes
中国RoHS规范Yes
状态ACTIVE
包装形状SQUARE
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式NO LEAD
端子涂层MATTE TIN
端子位置DUAL
包装材料PLASTIC/EPOXY
结构SINGLE
壳体连接COLLECTOR
元件数量1
晶体管应用SWITCHING
晶体管元件材料SILICON
晶体管类型GENERAL PURPOSE SMALL SIGNAL
最小直流放大倍数150
额定交叉频率100 MHz

文档预览

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NSS40500UW3T2G
40 V, 5.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb−Free Device
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Collector Current
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−40
−40
−7.0
−5.0
−6.0
Unit
Vdc
Vdc
Vdc
Adc
A
2
1
3
http://onsemi.com
−40
VOLTS
5.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
65 mW
COLLECTOR
3
1
BASE
2
EMITTER
WDFN3
CASE 506AU
MARKING DIAGRAM
VA M
G
1
VA = Specific Device Code
M = Date Code
G
= Pb−Free Package
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
R
qJA
(Note 2)
R
qJL
(Note 2)
P
Dsingle
(Notes 2 & 3)
T
J
, T
stg
Max
875
7.0
143
1.5
11.8
85
23
3.0
−55
to
+150
Unit
mW
mW/°C
°C/W
W
mW/°C
°C/W
°C/W
W
°C
ORDERING INFORMATION
Device
NSS40500UW3T2G
Package
WDFN3
(Pb−Free)
Shipping
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2
, 1 oz copper traces.
2. FR−4 @ 500 mm
2
, 1 oz copper traces.
3. Thermal response.
©
Semiconductor Components Industries, LLC, 2012
September, 2012
Rev. 2
1
Publication Order Number:
NSS40500UW3/D
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