VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Controlled Bridge (Power Modules),
55 A to 110 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 4000 V
RMS
isolating voltage
• UL E78996 approved
MT-K
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
55 A to 110 A
800 V to 1600 V
MT-K
Three phase bridge
PRODUCT SUMMARY
I
O
V
RRM
Package
Circuit
DESCRIPTION
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose and
heavy duty applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
O
I
FSM
I
2
t
I
2
t
V
RRM
T
Stg
T
J
Range
Range
Range
CHARACTERISTICS
VALUES
5.MT...K
55
T
C
50 Hz
60 Hz
50 Hz
60 Hz
85
390
410
770
700
7700
VALUES
9.MT...K
90
85
950
1000
4525
4130
45 250
800 to 1600
-40 to 125
-40 to 125
VALUES
11.MT...K
110
85
1130
1180
6380
5830
63 800
UNITS
A
°C
A
A
2
s
A
2
s
V
°C
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
80
100
120
140
160
80
100
120
140
160
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
1100
1300
1500
1700
900
1100
1300
1500
1700
V
DRM
, MAXIMUM
REPETITIVE PEAK
OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
I
RRM
/I
DRM
,
MAXIMUM
AT T
J
= 125 °C
mA
VS-5.MT...K
10
VS-9.MT...K
VS-11.MT...K
20
Revision: 27-Feb-14
Document Number: 94353
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
VALUES
5.MT...K
55
85
390
410
330
Initial T
J
= T
J
max.
345
770
700
540
500
7700
1.17
1.45
12.40
11.04
2.68
VALUES VALUES
UNITS
9.MT...K 11.MT...K
90
85
950
1000
800
840
4525
4130
3200
2920
45 250
1.09
1.27
4.10
3.59
1.65
150
200
400
110
85
1130
1180
950
1000
6380
5830
4510
4120
63 800
1.04
V
1.27
3.93
m
r
t2
(I >
x I
T(AV)
), T
J
maximum
I
pk
= 150 A, T
J
= 25 °C, t
p
= 400 μs single junction
T
J
= 25 °C, from 0.67 V
DRM
, I
TM
=
x I
T(AV)
,
I
g
= 500 mA, t
r
< 0.5 μs, t
p
> 6 μs
T
J
= 25 °C, anode supply = 6 V, resistive load,
gate open circuit
T
J
= 25 °C, anode supply = 6 V, resistive load
3.37
1.57
V
A/μs
A
2
s
A
2
s
A
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum DC output current at
case temperature
Maximum peak, one-cycle
forward, non-repetitive on state
surge current
SYMBOL
I
O
TEST CONDITIONS
120° rect. conduction angle
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value on-state slope
resistance
High level value on-state slope
resistance
Maximum on-state voltage drop
Maximum non-repetitve
rate of rise of turned on current
Maximum holding current
Maximum latching current
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
V
TM
dI/dt
I
H
I
L
mA
BLOCKING
PARAMETER
RMS isolation voltage
Maximum critical rate of rise of
off-state voltage
SYMBOL
V
ISOL
dV/dt
(1)
TEST CONDITIONS
T
J
= 25 °C all terminal shorted, f = 50 Hz, t = 1 s
T
J
= T
J
maximum, linear to 0.67 V
DRM
,
gate open circuit
5.MT...K
9.MT...K
4000
500
11.MT...K
UNITS
V
V/μs
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC gate
voltage to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GT
T
J
= - 40 °C
V
GT
T
J
= 25 °C
T
J
= 125 °C
Maximum required DC gate
current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
T
J
= - 40 °C
I
GT
T
J
= 25 °C
T
J
= 125 °C
V
GD
T
J
= T
J
maximum, rated V
DRM
applied
I
GD
6
mA
Anode supply = 6 V,
resistive load
T
J
= T
J
maximum
TEST CONDITIONS
5.MT...K
9.MT...K
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
0.25
V
mA
V
11.MT...K
UNITS
W
A
Revision: 27-Feb-14
Document Number: 94353
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
to heatsink
to terminal
SYMBOL
T
J
, T
Stg
DC operation per module
R
thJC
DC operation per junction
120 °C rect. conduction angle per module
120 °C rect. conduction angle per junction
R
thCS
Mounting surface smooth, flat and grased
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
0.18
1.07
0.19
1.17
TEST CONDITIONS
5.MT...K
9.MT...K
- 40 to 125
0.14
0.86
0.15
0.91
0.03
4 to 6
3 to 4
225
Nm
g
0.12
0.70
0.12
0.74
K/W
11.MT...K
UNITS
°C
Approximate weight
R
CONDUCTION PER JUNCTION
DEVICES
180°
5.MT...K
9.MT...K
11.MT...K
0.072
0.033
0.027
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
120°
0.085
0.039
0.033
90°
0.108
0.051
0.042
60°
0.152
0.069
0.057
30°
0.233
0.099
0.081
180°
0.055
0.027
0.023
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
120°
0.091
0.044
0.037
90°
0.117
0.055
0.046
60°
0.157
0.071
0.059
30°
0.236
0.100
0.082
K/W
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
130
5.MT..K
Series
1000
T
J
= 25 °C
T
J
= 125 °C
120
Instantaneous On-State Current (A)
Maximum Allowable
Case Temperature (°C)
100
110
120°
(Rect.)
100
+
90
~
-
80
0
10
20
30
40
50
60
10
5.MT..K
Series
Per junction
1
0
1
2
3
4
5
6
7
94353_01
Total Output Current (A)
Fig. 1 - Current Ratings Characteristic
94353_02
Instantaneous On-State Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Revision: 27-Feb-14
Document Number: 94353
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
220
200
180
160
140
120
100
80
60
40
20
0
0
94353_03a
Vishay Semiconductors
220
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
5.MT..K
Series
T
J
= 125 °C
200
180
160
140
120
100
80
60
40
20
0
0
1.0
0.
3
R
th
S
0.1
0.5
0.7
K/
W
K/
W
K/
W
0.
4
K/
W
2K
/W
A
2
0.
.0 5
=0
W
K/
K/W
120°
(Rect.)
R
-
Δ
K/W
/W
1.5 K
5
10 15 20 25 30 35 40 45 50 55
25
50
75
100
125
Total Output Current (A)
94353_03b
Maximum Allowable Ambient
Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
350
Maximum Allowable Case
Temperature (°C)
Peak Half
Sine
Wave
On-State Current (A)
300
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
130
9.MT..K
Series
120
120°
(Rect.)
110
250
100
+
90
~
-
80
200
5.MT..K
Series
Per junction
150
1
10
100
0
94353_06
20
40
60
80
100
94353_04
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Total Output Current (A)
Fig. 6 - Current Ratings Characteristic
Peak Half
Sine
Wave
On-State Current (A)
350
300
Maximum non-repetitive
surge
current
versus pulse train duration. Control
of conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
Instantaneous On-State Current (A)
400
1000
100
250
T
J
= 25 °C
10
T
J
= 125 °C
9.MT..K
Series
Per junction
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
200
5.MT..K
Series
Per junction
150
0.01
0.1
1
94353_05
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
94353_07
Total Output Current
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 27-Feb-14
Document Number: 94353
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
300
300
9.MT..K
Series
T
J
= 125 °C
Vishay Semiconductors
Maximum Total Power Loss (W)
0.
2
Maximum Total Power Loss (W)
1
0.
2
R
th
S
250
200
150
100
50
0
0
250
200
150
100
50
0
1.0
0.4
0.5
0.
3
K/
K/
W
W
A
.05
=0
K/
W
K/
W
K/
W
120°
(Rect.)
K/W
0.7
R
-
Δ
K/W
K/W
/W
1.5 K
10
20
30
40
50
60
70
80
90
94353_08b
0
25
50
75
100
125
94353_08a
Total Output Current (A)
Maximum Allowable Ambient
Temperature (°C)
Fig. 8 - Total Power Loss Characteristics
850
800
Maximum Allowable Case
Temperature (°C)
Peak Half
Sine
Wave
On-State Current (A)
750
700
650
600
550
500
450
400
1
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
130
11.MT..K
Series
120
120°
(Rect.)
110
100
+
90
~
-
80
9.MT..K
Series
Per junction
10
100
0
94353_11
20
40
60
80
100
120
94353_09
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Total Output Current (A)
Fig. 11 - Current Ratings Characteristic
1000
900
Peak Half
Sine
Wave
On-State Current (A)
800
700
600
500
400
300
0.01
Maximum non-repetitive
surge
current
versus pulse train duration. Control
of conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
Instantaneous On-State Current (A)
1000
100
T
J
= 25 °C
10
T
J
= 125 °C
9.MT..K
Series
Per junction
0.1
1
11.MT..K
Series
Per junction
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
94353_10
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
94353_12
Instantaneous On-State Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
Revision: 27-Feb-14
Document Number: 94353
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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