Collector to Base Voltage ........................................................................................................................... 25 V
V
CEO
Collector to Emitter Voltage........................................................................................................................ 15 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 3 V
I
C
Collector Current ......................................................................................................................................... 50 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
V
BE(on)
*h
FE
Cob
f
T
Min.
25
15
3
-
-
-
-
72
-
650
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
0.95
146
0.7
-
pF
MHz
Unit
V
V
V
nA
nA
mV
V
I
C
=100uA
I
C
=1mA
I
C
=10uA
V
CB
=20V
V
EB
=2V
I
C
=4mA, I
B
=0.4mA
V
CE
=10V, I
C
=4mA
V
CE
=5V, I
C
=2mA
V
CB
=10V, f=1MHz
V
CB
=10V, I
C
=4mA, f=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE
Rank
hFE
G
72-108
H
97-146
HMBT9018
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
1000
Spec. No. : HN200221
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 2/4
Current Gain & Collector Current
hFE
100
hFE @ V
CE
=5V
hFE
100
hFE @ V
CE
=10V
10
0.1
1
10
100
10
0.1
1
10
100
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
1000
On Voltage & Collector Current
V
BE(on)
V
CE
=10V
Saturation Voltage (mV)
100
V
CE(sat)
@ I
C
=10I
B
On Voltage (mV)
100
0.1
10
0.1
1
10
100
1
10
100
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Cutoff Frequency & Collector Current
10000
10
Capacitance & Reverae-Biased Voltage
1000
Cutoff Frequency (GHz)
fT @ V
CE
=10V
100
Capacitance (pF)
1
COb
10
1
0.1
1
10
100
0.1
0.1
1
10
100
Collector Current-I
C
(mA)
Reverae Biased Voltage (V)
HMBT9018
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
A
L
Rank Code
(G,H)
Spec. No. : HN200221
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 3/4
3 E
3
Pb Free Mark
B S
1
2
Pb-Free: " "
(Note)
Normal: None
V
G
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
G
H
J
K
L
S
V
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
DSP 与 ARM 处理器
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