All Purpose InGaAs p-i-n Photodiode
35PD300-S
The 35PD300-S, an InGaAs photodiode with a 300µm-diameter photosensitive region
mounted on a metallized ceramic substrate, is a versatile device applicable to high sensitivity
instrumentation, laser back-facet monitoring, and moderate-bit-rate telecomm and datacomm
systems. Planar semiconductor design and dielectric passivation provide superior noise
performance. Reliability is assured by 100% purge burn-in (200
o
C, 15 hours, V
r
= 15V).
Chips can also be attached and wire bonded to customer-supplied or other specified packages.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics
Parameters
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
Test Conditions
-
-5V
-5V
1300nm
1500nm
-
Min
-
-
-
0.70
-
-
Typ
-
-
4
0.9
1.0
-
Max
-15
10
-
-
-
3
Units
Volts
nA
pF
A/W
A/W
ns
Absolute Maximum Ratings
20 Volts
25 mA
5 mA
o
-40 C to + 85
o
C
-40
o
C to + 85
o
C
250
o
C
829 Flynn Road, Camarillo, CA 93012
tel (805) 445-4500
fax (805) 445-4502.