FMMT4402
FMMT4403
ISSUE 2 - MARCH 1995
7
SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
FMMT4402
FMMT4403
C
B
E
SWITCHING CHARACTERISTICS (at T
amb
= 25°C )
UNIT
ns
ns
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
FMMT4402
I
C
P
tot
T
j
:T
stg
FMMT4403
V
EBO
V
CEO
V
CBO
SYMBOL
V
CC
=-30V, V
BE(off)
=-2V
I
C
=-150mA, I
B1
=-15mA
(See Fig.1)
CONDITIONS
PARTMARKING DETAILS:
FMMT4402 - 2K
FMMT4403 - 2L
PARAMETER
SYMBOL
MIN.
MAX.
Turn-On Time
t
on
35
Turn-Off Time
t
off
255
ABSOLUTE MAXIMUM RATINGS.
VALUE
-40
-40
-5
-600
330
-55 to +150
UNIT
V
V
V
A
mW
°C
V
CC
=-30V, I
C
=-150mA
I
B1
=I
B2
=-15mA
(See Fig. 2)
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Current
Collector-Emitter
Cut-Off Current
Base Cut-Off
Current
Static Forward
Current
TransferRatio
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition
Frequency
Output Capacitance
Input Capacitance
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BEX
h
FE
SYMBOL
MIN.
-40
-40
-5
-0.1
-0.1
MAX.
MIN.
-40
-40
-5
-0.1
-0.1
MAX.
UNIT CONDITIONS
V
V
V
IC=-1mA, I
B
=0
I
C
=-0.1mA, I
E
=0
IE=-0.1mA, I
C
=0
µ
A V
CE
=-35V
V
EB(off)
=-0.4V
µ
A V
CE
=-35V
V
EB(off)
=-0.4V
30
50
50
20
V
CE(sat)
V
BE(sat)
f
T
C
obo
C
ibo
-0.75
150
150
-0.4
-0.75
-0.95
-1.3
30
60
100
100
20
300
-0.4
-0.75
-0.75
200
8.5
30
8.5
30
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
PAGE NUMBER
-0.95
-1.3
V
V
V
V
I
C
=-0.1mA, V
CE
=-1V
I
C
=-1mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-1V
I
C
=-150mA,V
CE
=-2V*
I
C
=-500mA,V
CE
=-2V*
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=-50mA*
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=-50mA
MHz I
C
=-20mA,V
CE
=-10V
f=100MHz
pF V
CB
=-10 V,I
E
=0
f=100kHz
pF V
BE
=0.5V
I
C
=0, f=100kHz
PAGE NUMBER
FMMT4402
FMMT4403
ISSUE 2 - MARCH 1995
7
SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
FMMT4402
FMMT4403
C
B
E
SWITCHING CHARACTERISTICS (at T
amb
= 25°C )
UNIT
ns
ns
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
FMMT4402
I
C
P
tot
T
j
:T
stg
FMMT4403
V
EBO
V
CEO
V
CBO
SYMBOL
V
CC
=-30V, V
BE(off)
=-2V
I
C
=-150mA, I
B1
=-15mA
(See Fig.1)
CONDITIONS
PARTMARKING DETAILS:
FMMT4402 - 2K
FMMT4403 - 2L
PARAMETER
SYMBOL
MIN.
MAX.
Turn-On Time
t
on
35
Turn-Off Time
t
off
255
ABSOLUTE MAXIMUM RATINGS.
VALUE
-40
-40
-5
-600
330
-55 to +150
UNIT
V
V
V
A
mW
°C
V
CC
=-30V, I
C
=-150mA
I
B1
=I
B2
=-15mA
(See Fig. 2)
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Current
Collector-Emitter
Cut-Off Current
Base Cut-Off
Current
Static Forward
Current
TransferRatio
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition
Frequency
Output Capacitance
Input Capacitance
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BEX
h
FE
SYMBOL
MIN.
-40
-40
-5
-0.1
-0.1
MAX.
MIN.
-40
-40
-5
-0.1
-0.1
MAX.
UNIT CONDITIONS
V
V
V
IC=-1mA, I
B
=0
I
C
=-0.1mA, I
E
=0
IE=-0.1mA, I
C
=0
µ
A V
CE
=-35V
V
EB(off)
=-0.4V
µ
A V
CE
=-35V
V
EB(off)
=-0.4V
30
50
50
20
V
CE(sat)
V
BE(sat)
f
T
C
obo
C
ibo
-0.75
150
150
-0.4
-0.75
-0.95
-1.3
30
60
100
100
20
300
-0.4
-0.75
-0.75
200
8.5
30
8.5
30
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
PAGE NUMBER
-0.95
-1.3
V
V
V
V
I
C
=-0.1mA, V
CE
=-1V
I
C
=-1mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-1V
I
C
=-150mA,V
CE
=-2V*
I
C
=-500mA,V
CE
=-2V*
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=-50mA*
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=-50mA
MHz I
C
=-20mA,V
CE
=-10V
f=100MHz
pF V
CB
=-10 V,I
E
=0
f=100kHz
pF V
BE
=0.5V
I
C
=0, f=100kHz
PAGE NUMBER
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