FMMT413
SOT23 NPN silicon planar avalanche transistor
Summary
V
(BR)CES
= 150V, V
(BR)CEO
= 50V, I
USB
= 25A
Description
The FMMT413 is a NPN silicon planar bipolar transistor optimized for
avalanche mode operation. Tight process control and low inductance
packaging combine to produce high current pulses with fast edges, ideal
for laser diode driving.
Features
•
•
•
Avalanche mode operation
50A peak avalanche current
Low inductance packaging
C
B
Applications
•
•
•
Laser LED drivers
Fast edge generation
High speed pulse generators
E
E
Ordering information
Device
FMMT413TD
FMMT413TA
Reel size
(inches)
7
7
Tape width
(mm)
8
8
Quantity per
reel
500
3,000
C
B
Pinout - top view
Device marking
413
Issue 3 - March 2006
© Zetex Semiconductors plc 2006
1
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FMMT413
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current (25ns Pulse Width)
Continuous collector current
Power dissipation at T
amb
=25°C
Linear derating factor
Operating and storage temperature range
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CM
I
C
P
D
T
j
, T
stg
Limit
150
50
6
50
100
330
-55 to +150
Unit
V
V
V
A
mA
mW
°C
Thermal resistance
Parameter
Junction to ambient
Symbol
R
JA
Limit
378
Unit
°C/W
Issue 3 - March 2006
© Zetex Semiconductors plc 2006
2
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FMMT413
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
I
EBO
Min.
150
150
50
6
100
100
150
Typ.
Max.
Unit
V
V
V
V
nA
nA
mV
I
C
= 100 A
I
C
= 10mA
I
E
= 100 A
V
CB
= 120V
V
EB
= 4V
I
C
= 10mA,
I
B
= 1mA
I
C
= 10mA,
I
B
= 1mA
V
C
=110V, C
CE
=4.7nF
(*)
V
C
=130V, C
CE
=4.7nF
(*)
I
C
= 10mA,
V
CE
= 10V
2.5
150
2
nH
MHz
pF
Standard SOT23
leads
I
C
= 10mA, V
CE
= 5V,
f = 20MHz
V
CB
= 10V, I
E
= 0,
f = 1MHz
Conditions
Collector-emitter saturation V
CE(sat)
voltage
Base-emitter saturation
voltage
Current in second
breakdown (pulsed)
V
BE(sat)
I
USB
22
25
Static forward current
transfer ratio
Collector-emitter
inductance
Transition frequency
Output capacitance
h
FE
L
ce
f
T
C
OBO
50
800
mV
A
A
NOTES:
(*) Measured with a circuit possessing an approximate loop inductance of 12nH.
Issue 3 - March 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
FMMT413
Typical characteristics
I(USB) - Avalanche current (A)
50
C
CE
=2x4.7nF
40
30
T
AMB
=25°C
I
B
=5mA/ns
p.r.f.=10kHz
C
CE
=4.7nF
C
CE
=2.2nF
C
CE
=1.0nF
20
10
0
0
50
100
150
200
250
V
S
- Supply voltage (V)
Issue 3 - March 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
FMMT413
Intentionally left blank
Issue 3 - March 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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