SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
FMMT2484
E
ISSUE 2 MARCH 94
FEATURES
* 60 Volt V
CEO
7
C
PARTMARKING DETAIL 4G
B
SOT23
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
MIN.
60
MAX.
UNIT
V
VALUE
60
60
6
200
50
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
SYMBOL
V
(BR)CBO
CONDITIONS.
I
C
=10
µ
A, I
E
=0
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE
h
FE
60
6
10
10
10
0.35
0.95
30
100
20
175
200
250
500
V
V
µ
A
I
C
=10mA, I
B
=0*
I
E
=10
µ
A, I
C
=0
nA
nA
V
V
CB
=45V, I
E
=0
V
CB
=45V, I
E
=0, T
amb
=150°C
VBE=5V
I
C
=1mA, I
B
=100
µ
A*
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
Static Forward
Current Transfer
Ratio
V
Output Capacitance
Input Capacitance
Noise Figure
C
obo
C
ibo
N
800
6
6
3
3
pF
pF
dB
dB
I
C
=1mA, V
CE
=5V*
I
C
=1
µ
A, V
CE
=5V*
I
C
=10
µ
A, V
CE
=5V*
I
C
=10
µ
A, V
CE
=5V, T
amb
=55°C
I
C
=100
µ
A, V
CE
=5V*
I
C
=500
µ
A, V
CE
=5V*
I
C
=1mA, V
CE
=5V*
I
C
=10mA, V
CE
=5V*
V
CB
=5V, I
E
=0, f=140KHz
V
BE
=0.5V, I
E
=0, f=140KHz
I
C
=200
µ
A, V
CE
=5V, R
g
=2k
Ω
f=1kHz, f=200Hz
I
C
=200
µ
A, V
CE
=5V, R
g
=2k
Ω
f=30Hz to 15kHz at -3dB points
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
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