SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
BST51
C
ISSUE 3 – JANUARY 1996
FEATURES
* Fast Switching
* High h
FE
PARTMAKING DETAIL —
AS2
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Pea Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
SYMBOL
VALUE
80
60
10
1.5
500
100
1
-65 to +150
UNIT
V
V
V
A
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Emitter Cut-Off Current
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Turn On Time
Turn Off Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
EBO
I
CES
V
CE(sat)
MIN.
80
60
10
10
10
1.3
1.3
V
BE(sat)
h
FE
t
on
t
off
1K
2K
400 Typical
1.5K Typical
ns
ns
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
For typical graphs see FMMT38A datasheet
1.9
MAX.
UNIT
V
V
V
µA
µA
V
V
V
CONDITIONS.
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=10µA, I
C
=0
V
EB
=8V, I
E
=0
V
CE
=60V, I
C
=0
I
C
=500mA, I
B
=0.5mA
I
C
=500mA, I
B
=0.5mA
T
j
=150°C
I
C
=500mA, I
B
=0.5mA
I
C
=150mA, V
CE
=10V*
I
C
=-500mA, V
CE
=-10V*
I
C
=500mA
I
Bon
=I
Boff
=0.5mA
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