Bulletin I2181 11/04
SAFE
IR
Series
30TPS16PbF
PHASE CONTROL SCR
Lead-Free ("PbF" suffix)
V
T
< 1.3V @ 20A
I
TSM
= 300A
V
RRM
= 1600V
Description/ Features
The 30TPS16PbF
SAFE
IR
series of silicon con-
trolled rectifiers are specifically designed for me-
dium power switching and phase control applica-
tions. The glass passivation technology used has
reliable operation up to 125°C junction tempera-
ture.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Major Ratings and Characteristics
Characteristics
I
T(AV)
Sinusoidal
waveform
I
RMS
V
RRM
/ V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
@ 20 A, T
J
= 25°C
30
1600
300
1.3
500
150
- 40 to 125
A
V
A
V
V/µs
A/µs
°C
Package Outline
Units
A
Values
20
TO-247AC
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1
30TPS16PbF
SAFE
IR
Series
Bulletin I2181 11/04
Voltage Ratings
V
RRM
/V
DRM
, max. repetitive
Part Number
peak and off-state voltage
V
1600
V
RSM
, maximum non repetitive
peak reverse voltage
V
1700
I
RRM
/I
DRM
125°C
mA
10
30TPS16PbF
Absolute Maximum Ratings
Parameters
I
T(AV)
Max. Average On-state Current
I
RMS
Max. RMS On-state Current
I
TSM
I
2
t
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
2
t for Fusing
30TPS..
20
30
250
300
310
442
Units
A
Conditions
@ T
C
= 95° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
s
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
√s
V
mΩ
V
mA
T
J
= 25 °C
T
J
= 125 °C
mA
mA
V/µs
A/µs
V
R
= rated V
RRM
/ V
DRM
t = 0.1 to 10ms, no voltage reapplied
@ 20A, T
J
= 25°C
T
J
= 125°C
I
2
√t
V
TM
r
t
Max. I
2
√t
for Fusing
Max. On-state Voltage Drop
On-state Slope Resistance
4420
1.3
12
1.0
0.5
10
100
200
500
150
V
T(TO)
Threshold Voltage
I
RM
/I
DM
Max.Reverse and Direct
Leakage Current
I
H
I
L
Max. Holding Current
Max. Latching Current
Anode Supply = 6V, Resistive load, Initial I
T
=1A
Anode Supply = 6V, Resistive load
dv/dt Max. Rate of Rise of off-state Voltage
di/dt Max. Rate of Rise of turned-on Current
2
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30TPS16PbF
SAFE
IR
Series
Bulletin I2181 11/04
Triggering
Parameters
P
GM
Max. Peak Gate Power
P
G(AV)
Max. Average Gate Power
+ I
GM
Max. Peak Positive Gate Current
- V
GM
Max. Peak Negative Gate Voltage
I
GT
Max. Required DC Gate Current
to Trigger
30TPS..
8.0
2.0
1.5
10
60
45
20
Units
W
Conditions
A
V
mA
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
V
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
T
J
= 125°C, V
DRM
= rated value
mA
T
J
= 125°C, V
DRM
= rated value
V
GT
Max. Required DC Gate Voltage
to Trigger
2.5
2.0
1.0
V
GD
I
GD
Max. DC Gate Voltage not to Trigger
Max. DC Gate Current not to Trigger
0.25
2.0
Switching
Parameters
t
gt
t
rr
t
q
Typical Turn-on Time
Typical Reverse Recovery Time
Typical Turn-off Time
30TPS..
0.9
4
110
Units
µs
T
J
= 25°C
T
J
= 125°C
Conditions
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
30TPS..
- 40 to 125
- 40 to 125
0.8
Units
°C
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Max. Thermal Resistance Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
Min.
Max.
Case Style
Marking Device
°C/W
DC operation
40
0.2
Mounting surface, smooth and greased
6 (0.21)
6 (5)
12 (10)
g (oz.)
Kg-cm
(lbf-in)
Jedec (Modified)
TO-247AC
30TPS16
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30TPS16PbF
SAFE
IR
Series
Bulletin I2181 11/04
Maximum Allowable Cas T
e emperature (°C)
Maximum Allow able Case Temperature (°C)
130
30T .. S
PS eries
R
thJC
(DC) = 0.8 °C/ W
130
30T .. S
PS eries
R
thJC
(DC) = 0.8 °C/ W
120
Conduction Angle
120
110
Conduction Period
110
30°
100
60°
90°
120°
180°
100
30°
90
60°
90°
120°
0
5
10
15
180° DC
25
30
35
90
0
5
10
15
20
25
Average On-state Current (A)
80
20
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
60
50
40
30
20
10
0
0
5
10
15
20
25
30
Average On-state Current (A)
180°
120°
90°
60°
30°
R Limit
MS
80
Fig. 2 - Current Rating Characteristics
60
DC
180°
120°
90°
60°
30°
MS
40 R Limit
Conduction Angle
Conduction Period
20
30T .. S
PS eries
T
J
= 125°C
0
0
10
20
30
40
50
Average On-state Current (A)
30T .. S
PS eries
T
J
= 125°C
Fig. 3 - On-state Power Loss Characteristics
Peak Half S Wave On-state Current (A)
ine
280
Fig. 4 - On-state Power Loss Characteristics
Peak Half S
ine Wave On-s
tate Current (A)
300
280
260
240
220
200
180
160
140
120
0.01
30T .. S
PS eries
0.1
Pulse T
rain Duration (s)
1
Maximum Non Repetitive S
urge Current
Versus Pulse T in Duration. Control
ra
Of Conduc tion May Not Be Maintained.
Initial T
J
= 125°C
No Voltage R
eap plied
R
ated V
RRM
R
eapplied
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
260
Initial T = 125°C
J
@60 Hz 0.0083 s
240
@50 Hz 0.0100 s
220
200
180
160
140
120
1
10
100
Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N)
30T .. S
PS eries
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
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30TPS16PbF
SAFE
IR
Series
Bulletin I2181 11/04
1000
Instantaneous On-state Current (A)
T
J
= 25°C
T
J
= 125°C
100
10
30T .. S
PS eries
1
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
T
rans
ient T
hermal Impedance Z
thJC
(°C/ W)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
S
teady S
tate Value
(DC Operation)
S
ingle Pulse
30T .. S
PS eries
0.01
0.0001
0.001
0.01
S
quare Wave Pulse Duration (s)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
100
Instantaneous Gate Voltage (V)
Rec tangular gate pulse
a)Rec ommended load line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/ dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
T = -10 °C
J
T = 25 °C
J
T = 125 °C
J
1
VGD
IGD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
30T .. S
PS eries
0.1
1
Frequenc y Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - GateCharacteristics
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