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71V67803S150BGGI: 产品描述Standard SRAM, 512KX18, 3.8ns, CMOS, PBGA119, 14 X 22 MM, ROHS COMPLIANT, MS-028AA, BGA-119; 产品类别存储存储; 文件大小515KB，共23页; 制造商IDT (Integrated Device Technology); 标准

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71V67803S150BGGI概述

Standard SRAM, 512KX18, 3.8ns, CMOS, PBGA119, 14 X 22 MM, ROHS COMPLIANT, MS-028AA, BGA-119

71V67803S150BGGI规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	BGA
包装说明	BGA, BGA119,7X17,50
针数	119
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	3.8 ns
其他特性	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	150 MHz
I/O 类型	COMMON
JESD-30 代码	R-PBGA-B119
JESD-609代码	e1
长度	22 mm
内存密度	9437184 bit
内存集成电路类型	STANDARD SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端子数量	119
字数	524288 words
字数代码	512000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	512KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	BGA
封装等效代码	BGA119,7X17,50
封装形状	RECTANGULAR
封装形式	GRID ARRAY
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	3.3 V
认证状态	Not Qualified
座面最大高度	2.36 mm
最大待机电流	0.07 A
最小待机电流	3.14 V
最大压摆率	0.325 mA
最大供电电压 (Vsup)	3.465 V
最小供电电压 (Vsup)	3.135 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL
端子节距	1.27 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	30
宽度	14 mm
Base Number Matches	1

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256K X 36, 512K X 18

3.3V Synchronous SRAMs

3.3V I/O, Burst Counter

Pipelined Outputs, Single Cycle Deselect

IDT71V67603

IDT71V67803

Features

256K x 36, 512K x 18 memory configurations

Supports high system speed:

– 166MHz 3.5ns clock access time

– 150MHz 3.8ns clock access time

– 133MHz 4.2ns clock access time

LBO

input selects interleaved or linear burst mode

Self-timed write cycle with global write control (GW byte

GW),

write enable (BWE and byte writes (BW

BWE),

BWx)

BWE

3.3V core power supply

Power down controlled by ZZ input

3.3V I/O supply (V

DDQ

)

Packaged in a JEDEC Standard 100-pin thin plastic quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch

ball grid array (fBGA).

Description

The IDT71V67603/7803 are high-speed SRAMs organized as

256K x 36/512K x 18. The IDT71V67603/7803 SRAMs contain write,

data, address and control registers. Internal logic allows the SRAM to

generate a self-timed write based upon a decision which can be left until

the end of the write cycle.

The burst mode feature offers the highest level of performance to the

system designer, as the IDT71V67603/7803 can provide four cycles of

data for a single address presented to the SRAM. An internal burst address

counter accepts the first cycle address from the processor, initiating the

access sequence. The first cycle of output data will be pipelined for one

cycle before it is available on the next rising clock edge. If burst mode

operation is selected (ADV=LOW), the subsequent three cycles of output

data will be available to the user on the next three rising clock edges. The

order of these three addresses are defined by the internal burst counter

and the

LBO

input pin.

The IDT71V67603/7803 SRAMs utilize IDT’s latest high-performance

CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-

pin thin plastic quad flatpack (TQFP), a 119 ball grid array (BGA) and a 165

fine pitch ball grid array (fBGA).

Pin Description Summary

-A

BWE

(1)

CLK

ADV

ADSC

ADSP

LBO

I/O

-I/O

, I/O

-I/O

, V

DDQ

Address Inputs

Chip Enable

Chip Selects

Output Enable

Global Write Enable

Byte Write Enable

Individual Byte Write Selects

Clock

Burst Address Advance

Address Status (Cache Controller)

Address Status (Processor)

Linear / Interleaved Burst Order

Sleep Mode

Data Input / Output

Core Power, I/O Power

Ground

Input

I/O

Supply

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

Asynchronous

Synchronous

N/A

5310 tbl 01

NOTE:

and

are not applicable for the IDT71V67802.

FEBRUARY 2009

SEPTEMBER 2004

DSC-5310/06

71V67803S150BGGI相似产品对比

	71V67803S150BGGI	71V67803S133BGGI	71V67603S150BQGI	71V67803S166BGG	71V67803S150BGG	71V67803S150BQGI	71V67603S166BGG	71V67803S150BQG
描述	Standard SRAM, 512KX18, 3.8ns, CMOS, PBGA119, 14 X 22 MM, ROHS COMPLIANT, MS-028AA, BGA-119	Standard SRAM, 512KX18, 4.2ns, CMOS, PBGA119, 14 X 22 MM, ROHS COMPLIANT, MS-028AA, BGA-119	Standard SRAM, 256KX36, 3.8ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, BGA-165	Standard SRAM, 512KX18, 3.5ns, CMOS, PBGA119, 14 X 22 MM, ROHS COMPLIANT, MS-028AA, BGA-119	Standard SRAM, 512KX18, 3.8ns, CMOS, PBGA119, 14 X 22 MM, ROHS COMPLIANT, MS-028AA, BGA-119	Standard SRAM, 512KX18, 3.8ns, CMOS, PBGA165, 13 X 15 MM, BGA-165	Standard SRAM, 256KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, ROHS COMPLIANT, MS-028AA, BGA-119	Standard SRAM, 512KX18, 3.8ns, CMOS, PBGA165, 13 X 15 MM, BGA-165
是否无铅	不含铅	不含铅	不含铅	不含铅	不含铅	含铅	不含铅	含铅
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	TBGA, BGA165,11X15,40	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	TBGA, BGA165,11X15,40	BGA, BGA119,7X17,50	TBGA, BGA165,11X15,40
针数	119	119	165	119	119	165	119	165
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991
最长访问时间	3.8 ns	4.2 ns	3.8 ns	3.5 ns	3.8 ns	3.8 ns	3.5 ns	3.8 ns
其他特性	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	150 MHz	133 MHz	150 MHz	166 MHz	150 MHz	150 MHz	166 MHz	150 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PBGA-B119	R-PBGA-B119	R-PBGA-B165	R-PBGA-B119	R-PBGA-B119	R-PBGA-B165	R-PBGA-B119	R-PBGA-B165
JESD-609代码	e1	e1	e1	e1	e1	e1	e1	e1
长度	22 mm	22 mm	15 mm	22 mm	22 mm	15 mm	22 mm	15 mm
内存密度	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	18	18	36	18	18	18	36	18
湿度敏感等级	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1
端子数量	119	119	165	119	119	165	119	165
字数	524288 words	524288 words	262144 words	524288 words	524288 words	524288 words	262144 words	524288 words
字数代码	512000	512000	256000	512000	512000	512000	256000	512000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	70 °C	70 °C	85 °C	70 °C	70 °C
组织	512KX18	512KX18	256KX36	512KX18	512KX18	512KX18	256KX36	512KX18
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	BGA	BGA	TBGA	BGA	BGA	TBGA	BGA	TBGA
封装等效代码	BGA119,7X17,50	BGA119,7X17,50	BGA165,11X15,40	BGA119,7X17,50	BGA119,7X17,50	BGA165,11X15,40	BGA119,7X17,50	BGA165,11X15,40
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY	GRID ARRAY, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260	260	260	NOT SPECIFIED	260	NOT SPECIFIED
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	2.36 mm	2.36 mm	1.2 mm	2.36 mm	2.36 mm	1.2 mm	2.36 mm	1.2 mm
最大待机电流	0.07 A	0.07 A	0.07 A	0.05 A	0.05 A	0.07 A	0.05 A	0.05 A
最小待机电流	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V
最大压摆率	0.325 mA	0.28 mA	0.325 mA	0.34 mA	0.305 mA	0.325 mA	0.34 mA	0.305 mA
最大供电电压 (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
最小供电电压 (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	1.27 mm	1.27 mm	1 mm	1.27 mm	1.27 mm	1 mm	1.27 mm	1 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	30	30	30	30	30	NOT SPECIFIED	30	NOT SPECIFIED
宽度	14 mm	14 mm	13 mm	14 mm	14 mm	13 mm	14 mm	13 mm
Base Number Matches	1	1	1	1	1	1	1	-

71V67803S150BGGI

71V67803S150BGGI概述

71V67803S150BGGI规格参数

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71V67803S150BGGI相似产品对比

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