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70V631S15BFG8

产品描述Dual-Port SRAM, 256KX18, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208
产品类别存储    存储   
文件大小213KB,共23页
制造商IDT (Integrated Device Technology)
标准
下载文档 详细参数 全文预览

70V631S15BFG8概述

Dual-Port SRAM, 256KX18, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208

70V631S15BFG8规格参数

参数名称属性值
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
包装说明BGA,
Reach Compliance Codecompliant
最长访问时间15 ns
JESD-30 代码S-PBGA-B208
内存密度4718592 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
功能数量1
端子数量208
字数262144 words
字数代码256000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX18
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状SQUARE
封装形式GRID ARRAY
并行/串行PARALLEL
峰值回流温度(摄氏度)260
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式BALL
端子位置BOTTOM
处于峰值回流温度下的最长时间30
Base Number Matches1

文档预览

下载PDF文档
LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018
HIGH-SPEED 3.3V 256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
IDT70V631S
Features
Functional Block Diagram
UB
L
LB
L
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12ns (max.)
Dual chip enables allow for depth expansion without
external logic
IDT70V631 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
128-pin TQFP package.
LVTTL-compatible, single 3.3V (±150mV) power supply for
core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 128-pin Thin Quad Flatpack, 208-ball fine
pitch Ball Grid Array, and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
UB
R
LB
R
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0L
CE
1L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
17L
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
17R
A
0R
OE
L
CE
0L
CE
1L
R/W
L
BUSY
L
SEM
L
INT
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0R
CE
1R
R/W
R
BUSY
R
M/S
SEM
R
INT
R
TDI
TDO
JTAG
TMS
TCK
TRST
5622 drw 01
NOTES:
1.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
DECEMBER 2017
DSC-5622/8
1
©2017 Integrated Device Technology, Inc.

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