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7008L55PFI

产品描述Dual-Port SRAM, 64KX8, 55ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
产品类别存储    存储   
文件大小716KB,共20页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

7008L55PFI概述

Dual-Port SRAM, 64KX8, 55ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100

7008L55PFI规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
针数100
Reach Compliance Codenot_compliant
ECCN代码EAR99
最长访问时间55 ns
I/O 类型COMMON
JESD-30 代码S-PQFP-G100
JESD-609代码e0
长度14 mm
内存密度524288 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度8
湿度敏感等级3
功能数量1
端口数量2
端子数量100
字数65536 words
字数代码64000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织64KX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LFQFP
封装等效代码QFP100,.63SQ,20
封装形状SQUARE
封装形式FLATPACK, LOW PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)240
电源5 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.01 A
最小待机电流4.5 V
最大压摆率0.27 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn85Pb15)
端子形式GULL WING
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间20
宽度14 mm
Base Number Matches1

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HIGH-SPEED
64K x 8 DUAL-PORT
STATIC RAM
Features
IDT7008S/L
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Commercial: 15/20/25/35/55ns (max.)
– Industrial: 20/55ns (max.)
Low-power operation
– IDT7008S
Active: 750mW (typ.)
Standby: 5mW (typ.)
– IDT7008L
Active: 750mW (typ.)
Standby: 1mW (typ.)
Dual chip enables allow for depth expansion without
external logic
IDT7008 easily expands data bus width to 16 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
TTL-compatible, single 5V (±10%) power supply
Available in 84-pin PGA, 84-pin PLCC, and a 100-pin TQFP
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Functional Block Diagram
R/W
L
CE
0L
CE
1L
OE
L
R/W
R
CE
0R
CE
1R
OE
R
I/O
0-7L
I/O
Control
I/O
Control
I/O
0-7R
BUSY
L
(1,2)
BUSY
R
64Kx8
MEMORY
ARRAY
7008
16
16
(1,2)
A
15L
A
0L
Address
Decoder
Address
Decoder
A
15R
A
0R
CE
0L
CE
1L
OE
L
R/W
L
SEM
L
(2)
INT
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
0R
CE
1R
OE
R
R/W
R
SEM
R
(2)
INT
R
3198 drw 01
M/S
(1)
NOTES:
1.
BUSY
is an input as a Slave (M/S = V
IL
) and an output when it is a Master (M/S = V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
APRIL 2016
DSC 3198/11
1
©2016 Integrated Device Technology, Inc.

7008L55PFI相似产品对比

7008L55PFI 7008L55PFI8 WBDDSS8-B-07-1723-B-G 7008S20PFI8
描述 Dual-Port SRAM, 64KX8, 55ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Application Specific SRAM, 64KX8, 55ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Array/Network Resistor, Bussed, 0.05W, 172000ohm, 100V, 0.1% +/-Tol, -25,25ppm/Cel, 1408, Application Specific SRAM, 64KX8, 20ns, CMOS, PQFP100
Reach Compliance Code not_compliant not_compliant compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 3A991.B.2.B
端子数量 100 100 16 100
最高工作温度 85 °C 85 °C 150 °C 85 °C
最低工作温度 -40 °C -40 °C -55 °C -40 °C
封装形式 FLATPACK, LOW PROFILE, FINE PITCH FLATPACK SMT FLATPACK
是否无铅 含铅 含铅 - 含铅
是否Rohs认证 不符合 不符合 - 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) - IDT (Integrated Device Technology)
最长访问时间 55 ns 55 ns - 20 ns
I/O 类型 COMMON COMMON - COMMON
JESD-30 代码 S-PQFP-G100 S-PQFP-G100 - S-PQFP-G100
JESD-609代码 e0 e0 - e0
内存密度 524288 bit 524288 bit - 524288 bit
内存集成电路类型 DUAL-PORT SRAM APPLICATION SPECIFIC SRAM - APPLICATION SPECIFIC SRAM
内存宽度 8 8 - 8
湿度敏感等级 3 3 - 3
端口数量 2 2 - 2
字数 65536 words 65536 words - 65536 words
字数代码 64000 64000 - 64000
工作模式 ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS
组织 64KX8 64KX8 - 64KX8
输出特性 3-STATE 3-STATE - 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
封装代码 LFQFP QFP - QFP
封装等效代码 QFP100,.63SQ,20 QFP100,.63SQ,20 - QFP100,.63SQ,20
封装形状 SQUARE SQUARE - SQUARE
并行/串行 PARALLEL PARALLEL - PARALLEL
峰值回流温度(摄氏度) 240 240 - 240
电源 5 V 5 V - 5 V
认证状态 Not Qualified Not Qualified - Not Qualified
最小待机电流 4.5 V 4.5 V - 4.5 V
标称供电电压 (Vsup) 5 V 5 V - 5 V
表面贴装 YES YES - YES
技术 CMOS CMOS - CMOS
温度等级 INDUSTRIAL INDUSTRIAL - INDUSTRIAL
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) - Tin/Lead (Sn85Pb15)
端子形式 GULL WING GULL WING - GULL WING
端子节距 0.5 mm 0.5 mm - 0.5 mm
端子位置 QUAD QUAD - QUAD
处于峰值回流温度下的最长时间 20 20 - 20
Base Number Matches 1 1 - 1

 
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