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1N4942LEADFREE

产品描述Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN
产品类别分立半导体    二极管   
文件大小403KB,共2页
制造商Central Semiconductor
标准
下载文档 详细参数 选型对比 全文预览

1N4942LEADFREE概述

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN

1N4942LEADFREE规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明HERMETIC SEALED, GPR-1A, 2 PIN
针数2
Reach Compliance Codecompli
ECCN代码EAR99
其他特性HIGH RELIABILITY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码E-LALF-W2
JESD-609代码e3
元件数量1
端子数量2
最大输出电流1 A
封装主体材料GLASS
封装形状ELLIPTICAL
封装形式LONG FORM
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压200 V
最大反向恢复时间0.15 µs
表面贴装NO
端子面层MATTE TIN (315)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间10
Base Number Matches1

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1N4942
1N4943
1N4944
1N4945
1N4946
1N4947
1N4948
w w w. c e n t r a l s e m i . c o m
FAST RECOVERY
GLASS PASSIVATED
SILICON RECTIFIERS
1.0 AMP, 200 THRU 1000 VOLT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4942 series
types are silicon rectifiers mounted in a hermetically
sealed, glass passivated package, designed for general
purpose applications where fast reverse recovery times
and high reliability is desired.
MARKING: FULL PART NUMBER
GPR-1A CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL 1N4942 1N4943 1N4944 1N4945 1N4946 1N4947 1N4948 UNITS
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VR
200
200
140
300
300
210
400
400
280
1.0
50
500
500
350
600
600
420
800
800
560
1000
1000
700
V
V
V
A
A
°C
VR(RMS)
Average Forward Current (TA=55°C)
IO
Peak Forward Surge Current
IFSM
Operating and Storage
Junction Temperature
ELECTRICAL
SYMBOL
IR
VF
CJ
trr
trr
trr
TJ, Tstg
-65 to +200
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
VR=Rated VRRM
IF=1.0A
VR=12V, f=1.0MHz
IF=0.5A, IR=1.0A, Irr=0.25A (1N4942 thru 1N4945)
IF=0.5A, IR=1.0A, Irr=0.25A (1N4946, 1N4947)
IF=0.5A, IR=1.0A, Irr=0.25A (1N4948)
MAX
1.0
1.3
45
150
250
500
UNITS
μA
V
pF
ns
ns
ns
R1 (28-February 2013)

1N4942LEADFREE相似产品对比

1N4942LEADFREE 1N4946LEADFREE 1N4944LEADFREE 1N4948LEADFREE 1N4947LEADFREE 1N4943LEADFREE 1812H0500160FCT
描述 Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, HERMETIC SEALED, GPR-1A, 2 PIN Ceramic Capacitor, Multilayer, Ceramic, 50V, 1% +Tol, 1% -Tol, C0G, -/+30ppm/Cel TC, 0.000016uF, 1812,
包装说明 HERMETIC SEALED, GPR-1A, 2 PIN HERMETIC SEALED, GPR-1A, 2 PIN E-LALF-W2 HERMETIC SEALED, GPR-1A, 2 PIN HERMETIC SEALED, GPR-1A, 2 PIN HERMETIC SEALED, GPR-1A, 2 PIN , 1812
Reach Compliance Code compli compli compli compli compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-609代码 e3 e3 e3 e3 e3 e3 e0
端子数量 2 2 2 2 2 2 2
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM SMT
端子面层 MATTE TIN (315) MATTE TIN (315) MATTE TIN (315) MATTE TIN (315) MATTE TIN MATTE TIN Tin/Lead (Sn90Pb10) - with Nickel (Ni) barrier
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 -
是否Rohs认证 符合 符合 符合 符合 - - 不符合
针数 2 2 2 2 2 2 -
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY -
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED -
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
JESD-30 代码 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 -
元件数量 1 1 1 1 1 1 -
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A -
封装主体材料 GLASS GLASS GLASS GLASS GLASS GLASS -
封装形状 ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL -
峰值回流温度(摄氏度) 260 260 260 260 NOT SPECIFIED NOT SPECIFIED -
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
最大重复峰值反向电压 200 V 600 V 400 V 1000 V 800 V 300 V -
最大反向恢复时间 0.15 µs 0.25 µs 0.15 µs 0.5 µs 0.25 µs 0.15 µs -
表面贴装 NO NO NO NO NO NO -
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE -
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL -
处于峰值回流温度下的最长时间 10 10 10 10 NOT SPECIFIED NOT SPECIFIED -
Base Number Matches 1 1 1 1 1 1 -

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