WMF2M8-XXX5
2Mx8 MONOLITHIC NOR FLASH (SMD 5962-97609*)
FEATURES
Access Times of 90, 120, 150ns
Packaging:
• 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).
Fits standard 56 SSOP footprint.
• 44 pin Ceramic LCC**
Sector Architecture
• 32 equal size sectors of 64KBytes each
• Any combination of sectors can be erased. Also supports
full chip erase.
100,000 Write/Erase Cycles Minimum
Organized as 2Mx8
Commercial, Industrial, and Military Temperature Ranges
5V Read and Write
This product is subject to change without notice.
* For reference only. See table page 7.
** Package to be developed.
Note: For programming information and waveforms refer to Flash Programming 16M5 Application
Note AN0038.
Low Power CMOS
Data# Polling and Toggle Bit feature for detection of
program or erase cycle completion.
Supports reading or programming data to a sector not being
erased.
RESET# pin resets internal state machine to the read
mode.
Multiple Ground Pins for Low Noise Operation
FIGURE 1 – PIN CONFIGURATION FOR WMF2M8-XXX5
56 CSOP
TOP VIEW
CS#
A12
A13
A14
A15
NC
NC
NC
A20
A19
A18
A17
A16
V
CC
GND
I/O6
NC
I/O7
NC
RY/BY#
OE#
WE#
NC
NC
I/O5
NC
I/O4
V
CC
44 CLCC**
TOP VIEW
NC
RESET#
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
GND
A8
V
CC
NC
I/O1
NC
I/O0
A0
NC
NC
NC
I/O2
NC
I/O3
NC
GND
RESET#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
CS#
V
CC
A
10
A
12
A
13
A
14
6 5 4 3 2 1 44 43 42 41 40
A
7
A
6
A
5
A
4
NC
NC
NC
A
3
A
2
A
1
A
0
7
8
9
10
11
12
13
14
15
16
17
18 19 20 21 22 23 24 25 26 27 28
I/O
1
I/O
2
I/O
3
V
CC
I/O
4
I/O
5
I/O
6
GND
GND
I/O
0
I/O
7
39
38
37
36
35
34
33
32
31
30
29
A
16
A
17
A
18
A
19
NC
NC
NC
A
20
WE#
OE#
RY/BY#
PIN DESCRIPTION
I/O0-7
A0-20
WE#
CS#
OE#
V
CC
GND
RY/BY#
RESET#
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Select
Output Enable
Power Supply
Ground
Ready/Busy
Reset
** Package to be developed.
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 9
© 2012 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
A
15
A
11
A
8
A
9
WMF2M8-XXX5
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on Any Pin Relative to V
SS
Storage Temperature
Endurance - Write/Erase Cycles (Mil Temp)
Data Retention (Mil Temp)
Symbol
V
T
T
STG
Ratings
-2.0 to +7.0
-65 to +150
100,000 min
20
Unit
V
°C
cycles
years
Parameter
Address Input capacitance
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
Data I/O capacitance
CAPACITANCE
T
A
= +25°C
Symbol
C
AD
C
OE
C
WE
C
CS
C
I/O
Conditions
V
I/O
= 0 V, f = 1.0MHz
V
IN
= 0 V, f = 1.0MHz
V
IN
= 0 V, f = 1.0MHz
V
IN
= 0 V, f = 1.0MHz
V
I/O
= 0 V, f = 1.0MHz
Max
12
12
12
12
12
Unit
pF
pF
pF
pF
pF
NOTES:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may
overshoot V
SS
to –2.0 V for periods of up to 20 ns. See . Maximum DC voltage on output and
I/O pins is V
CC
+ 0.5 V. During voltage transitions, outputs may overshoot to V
CC
+ 2.0 V for
periods up to 20 ns. See .
2. Minimum DC input voltage on A9, OE#, RESET# pins is –0.5V. During voltage transitions, A9,
OE#, RESET# pins may overshoot V
SS
to –2.0 V for periods of up to 20 ns. See Maximum DC
input voltage on A9, OE#, and RESET# is 12.5 V which may overshoot to 13.5 V for periods up
to 20 ns.
Stresses greater than those listed in this section may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure of the device to
absolute maximum rating conditions for extended periods may affect device reliability.
This parameter is guaranteed by design but not tested.
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Operating Temperature (Mil.)
Operating Temperature (Ind.)
Operating Temperature (Com.)
Symbol
V
CC
V
SS
V
IH
V
IL
T
A
T
A
T
A
Min
4.5
0
2.0
-0.5
-55
-40
0
Typ
5.0
0
-
-
-
-
-
Max
5.5
0
V
CC
+ 0.5
+0.8
+125
+85
+70
Unit
V
V
V
V
°C
°C
°C
DC CHARACTERISTICS — CMOS COMPATIBLE
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program or Erase (2)
V
CC
Standby Current
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
Symbol
I
LI
I
LO
I
CC1
I
CC2
I
CC3
V
OL
V
OH
V
LKO
Conditions
V
CC
= V
CC MAX
, V
IN
= GND to V
CC
V
CC
= V
CC MAX
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz
CS# = V
IL
, OE# = V
IH
V
CC
= V
CC MAX
, CS# = V
CC
± 0.5V, f = 5MHz, RESET# = Vcc ± 0.5V
I
OL
= 12.0 mA, V
CC
= V
CC MIN
I
OH
= -2.5 mA, V
CC
= V
CC MIN
Min
Max
10
10
40
60
2.0
0.45
4.2
Unit
μA
μA
mA
mA
mA
V
V
V
0.85xV
CC
3.2
NOTES:
1. The Icc is typically less than 2mA/MHz, with OE# at V
IH
.
2. Icc active while Embedded Algorithm (program or erase) is in progress.
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 9
© 2012 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMF2M8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – WE# CONTROLLED
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase (2)
Read Recovery Time before Write
V
CC
Setup Time
Chip Programming Time
Chip Erase Time (3)
Output Enable Hold Time (4)
RESET# Pulse Width
NOTES:
1. Typical value for t
WHWH1
is 7μs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
Symbol
t
AVAV
t
ELWL
t
WLWH
t
AVWL
t
DVWH
t
WHDX
t
WLAX
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
VCS
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
WPH
Min
90
0
45
0
45
0
45
20
-90
Max
Min
120
0
50
0
50
0
50
20
-120
Max
Min
150
0
50
0
50
0
50
20
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
μs
μs
sec
sec
ns
ns
300
15
0
50
44
256
t
OEH
t
RP
10
500
10
500
0
50
300
15
0
50
44
256
10
500
300
15
44
256
AC CHARACTERISTICS – READ-ONLY OPERATIONS
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Output Enable Hold Time
Symbol
t
AVAV
t
AVQV
t
ELQV
t
GLQV
Read
Toggle &
Data Polling
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
OEH
t
DF
t
DF
t
OH
t
Ready
Min
90
-90
Max
90
90
40
0
10
20
20
0
20
0
20
0
10
30
30
0
20
Min
120
-120
Max
120
120
50
0
10
35
35
Min
150
-150
Max
150
150
55
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
Chip Select High to Output High Z (1)
Output Enable High to Output High Z (1)
Output Hold from Addresses, CS# or OE# Change,
whichever is First
RESET# Low to Read Mode (1)
1.
Guaranteed by design, not tested.
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 9
© 2012 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMF2M8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED
Parameter
Write Cycle Time
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time
Chip Programming Time
Chip Erase Time (3)
Output Enable Hold Time (4)
NOTES:
1. Typical value for t
WHWH1
is 7μs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
Symbol
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
CPH
Min
90
0
45
0
45
0
45
20
-90
Max
Min
120
0
50
0
50
0
50
20
-120
Max
Min
150
0
50
0
50
0
50
20
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
μs
sec
sec
ns
300
15
0
44
256
t
OEH
10
10
0
300
15
0
44
256
10
300
15
44
256
FIGURE 2 – AC TEST CIRCUIT
Parameter
Input Pulse Levels
Current Source
I
OL
AC Test Conditions
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
D.U.T.
C
eff
= 50 pf
V
Z
= 1.5V
(Bipolar Supply)
Current Source
I
OL
HARDWARE RESET (RESET#)
Parameter
Std
t
READY
t
READY
t
RP
t
RH
t
RB
Description
RESET Pin Low (During Embedded Algorithms) to Read or Write (See Note)
RESET Pin Low (Not During Embedded Algorithms) to Read or Write (See Note)
RESET Pulse Width
RESET High Time Before Read (See Note)
RY/BY Recovery Time
Test Setup
Max
Max
Min
Min
Min
All Speed Options
20
500
500
50
0
Unit
μs
ns
ns
ns
ns
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 9
© 2012 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMF2M8-XXX5
TEMPORARY SECTOR UNPROTECTED
Parameter
Std
t
VIDR
t
RSP
NOTE:
Not 100% tested.
Description
V
ID
Rise and Fall time (see notes)
RESET# setup time for temporary sector unprotect
Min
Min
All Speed Options
500
4
Unit
ns
ms
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 9
© 2012 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
