IC 2-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, CDIP16, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-16, Voltage Reference
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | ADI(亚德诺半导体) |
| 零件包装代码 | DIP |
| 包装说明 | HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-16 |
| 针数 | 16 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 模拟集成电路 - 其他类型 | THREE TERMINAL VOLTAGE REFERENCE |
| JESD-30 代码 | R-CDIP-T16 |
| JESD-609代码 | e0 |
| 负电源电压最大值（Vsup） | -18 V |
| 负电源电压最小值（Vsup） | -13.5 V |
| 功能数量 | 1 |
| 输出次数 | 2 |
| 端子数量 | 16 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 最大输出电压 | 10.005 V |
| 最小输出电压 | 9.995 V |
| 标称输出电压 | 10 V |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP16,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | NOT APPLICABLE |
| 认证状态 | Not Qualified |
| 最大供电电流 (Isup) | 10 mA |
| 最大供电电压 (Vsup) | 18 V |
| 最小供电电压 (Vsup) | 13.5 V |
| 表面贴装 | NO |
| 技术 | BIPOLAR |
| 最大电压温度系数 | 6 ppm/°C |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT APPLICABLE |
| 微调/可调输出 | YES |
| 最大电压容差 | 0.1% |
| Base Number Matches | 1 |
| 5962-8972801EA | 5962-89728012A | 5962-8972802EA | |
|---|---|---|---|
| 描述 | IC 2-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, CDIP16, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-16, Voltage Reference | IC 2-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, CQCC20, CERAMIC, LCC-20, Voltage Reference | IC 2-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, CDIP16, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-16, Voltage Reference |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | ADI(亚德诺半导体) | ADI(亚德诺半导体) | ADI(亚德诺半导体) |
| 零件包装代码 | DIP | QLCC | DIP |
| 包装说明 | HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-16 | CERAMIC, LCC-20 | HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-16 |
| 针数 | 16 | 20 | 16 |
| Reach Compliance Code | unknown | not_compliant | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 模拟集成电路 - 其他类型 | THREE TERMINAL VOLTAGE REFERENCE | THREE TERMINAL VOLTAGE REFERENCE | THREE TERMINAL VOLTAGE REFERENCE |
| JESD-30 代码 | R-CDIP-T16 | S-CQCC-N20 | R-CDIP-T16 |
| JESD-609代码 | e0 | e0 | e0 |
| 负电源电压最大值（Vsup） | -18 V | -18 V | -18 V |
| 负电源电压最小值（Vsup） | -13.5 V | -13.5 V | -13.5 V |
| 功能数量 | 1 | 1 | 1 |
| 输出次数 | 2 | 2 | 2 |
| 端子数量 | 16 | 20 | 16 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C |
| 最大输出电压 | 10.005 V | 10.005 V | 10.005 V |
| 最小输出电压 | 9.995 V | 9.995 V | 9.995 V |
| 标称输出电压 | 10 V | 10 V | 10 V |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | QCCN | DIP |
| 封装等效代码 | DIP16,.3 | LCC20,.35SQ | DIP16,.3 |
| 封装形状 | RECTANGULAR | SQUARE | RECTANGULAR |
| 封装形式 | IN-LINE | CHIP CARRIER | IN-LINE |
| 峰值回流温度（摄氏度） | NOT APPLICABLE | NOT APPLICABLE | NOT SPECIFIED |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电流 (Isup) | 10 mA | 10 mA | 10 mA |
| 最大供电电压 (Vsup) | 18 V | 18 V | 18 V |
| 最小供电电压 (Vsup) | 13.5 V | 13.5 V | 13.5 V |
| 表面贴装 | NO | YES | NO |
| 技术 | BIPOLAR | BIPOLAR | BIPOLAR |
| 最大电压温度系数 | 6 ppm/°C | 6 ppm/°C | 4 ppm/°C |
| 温度等级 | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) - hot dipped |
| 端子形式 | THROUGH-HOLE | NO LEAD | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 1.27 mm | 2.54 mm |
| 端子位置 | DUAL | QUAD | DUAL |
| 处于峰值回流温度下的最长时间 | NOT APPLICABLE | NOT APPLICABLE | NOT SPECIFIED |
| 微调/可调输出 | YES | YES | YES |
| 最大电压容差 | 0.1% | 0.1% | 0.1% |
| Base Number Matches | 1 | 1 | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
