电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

3001

产品描述S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
产品类别半导体    分立半导体   
文件大小205KB,共4页
制造商GHz Technology ( Microsemi )
官网地址http://www.advancedpower.com/
下载文档 详细参数 全文预览

3001在线购买

供应商 器件名称 价格 最低购买 库存  
3001 - - 点击查看 点击购买

3001概述

S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

S波段, 硅, NPN, 射频小信号晶体管

3001规格参数

参数名称属性值
端子数量2
晶体管极性NPN
最大集电极电流0.2000 A
加工封装描述HERMETIC SEALED, 55BT, 2 PIN
状态TRANSFERRED
包装形状RECTANGULAR
包装尺寸FLANGE MOUNT
表面贴装Yes
端子形式FLAT
端子位置DUAL
包装材料CERAMIC, METAL-SEALED COFIRED
结构SINGLE
元件数量1
晶体管应用AMPLIFIER
晶体管元件材料SILICON
晶体管类型RF SMALL SIGNAL
最高频带S BAND

文档预览

下载PDF文档
3001
1 Watt - 28 Volts, Class C
Microwave 3000 MHz
GENERAL DESCRIPTION
The 3001 is a COMMON BASE transistor capable of providing 1 Watts Class
C, RF output power at 3000 MHz. Gold metalization and diffused ballasting
are used to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder Sealed package.
CASE OUTLINE
55BT
, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
5 Watts
50 Volts
3.5 Volts
0.20 A
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 3.0 GHz
Vcb = 28 Volts
Po = 1 Watts
As Above
F =3 GHz, Po = 1 W
MIN
1.0
7.0
.14
8.5
30
0.2
TYP
MAX
UNITS
Watt
Watt
dB
%
η
c
VSWR
1
30:1
BVces
BVcbo
BVebo
Icbo
h
FE
Cob
θ
jc
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 10 mA
Ic = 1 mA
Ie = 1 mA
Vcb = 28 Volts
50
45
3.5
0.5
10
35
Volts
Volts
Volts
mA
o
Vce = 5 V, Ic = 100 mA
F = 1 MHz, Vcb = 28 V
C/W
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2038  2121  1628  1090  2865  19  49  45  17  6 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved