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IDT70T631S10DDG

产品描述Dual-Port SRAM, 256KX18, 10ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144
产品类别存储    存储   
文件大小311KB,共27页
制造商IDT (Integrated Device Technology)
标准
下载文档 详细参数 全文预览

IDT70T631S10DDG概述

Dual-Port SRAM, 256KX18, 10ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144

IDT70T631S10DDG规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明20 X 20 MM, 1.40 MM HEIGHT, TQFP-144
针数144
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间10 ns
I/O 类型COMMON
JESD-30 代码S-PQFP-G144
JESD-609代码e3
长度20 mm
内存密度4718592 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
功能数量1
端口数量2
端子数量144
字数262144 words
字数代码256000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX18
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LFQFP
封装等效代码QFP144,.87SQ,20
封装形状SQUARE
封装形式FLATPACK, LOW PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源2.5,2.5/3.3 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.01 A
最小待机电流2.4 V
最大压摆率0.405 mA
最大供电电压 (Vsup)2.6 V
最小供电电压 (Vsup)2.4 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层MATTE TIN
端子形式GULL WING
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间30
宽度20 mm
Base Number Matches1

文档预览

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Features
HIGH-SPEED 2.5V
512/256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
IDT70T633/1S
u
True Dual-Port memory cells which allow simultaneous
access of the same memory location
u
High-speed access
– Commercial: 8/10/12/15ns (max.)
– Industrial: 10/12ns (max.)
u
RapidWrite Mode simplifies high-speed consecutive write
cycles
u
Dual chip enables allow for depth expansion without
external logic
u
IDT70T633/1 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
u
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
u
Busy and Interrupt Flags
u
Full hardware support of semaphore signaling between
ports on-chip
u
On-chip port arbitration logic
u
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
u
Sleep Mode Inputs on both ports
u
Supports JTAG features compliant to IEEE 1149.1 in
BGA-208 and BGA-256 packages
u
Single 2.5V (±100mV) power supply for core
u
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
u
Available in a 256-ball Ball Grid Array, 144-pin Thin Quad
Flatpack and 208-ball fine pitch Ball Grid Array
u
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
UB
R
LB
R
Functional Block Diagram
UB
L
LB
L
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0L
CE
1L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
512/256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
18L
(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
18R
(1)
A
0R
TDI
OE
L
CE
0L
CE
1L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0R
CE
1R
TDO
JTAG
TCK
TMS
TRST
R/W
L
R/W
R
BUSY
L(2,3)
SEM
L
INT
L(3)
(4)
BUSY
R(2,3)
M/S
SEM
R
INT
R(3)
NOTES:
LOGIC
1. Address A
18
x is a NC for IDT70T631.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the
sleep mode pins themselves (ZZx) are not affected during sleep mode.
ZZ
L
ZZ
CONTROL
ZZ
R
(4)
5670 drw 01
APRIL 2004
DSC-5670/4
1
©2004 Integrated Device Technology, Inc.

 
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