HMC580ST89
/
580ST89E
v00.1106
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1.0 GHz
Features
P1dB Output Power: +22 dBm
Gain: 22 dB
Output IP3: +37 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V
Industry Standard SOT89 Package
5
AMPLIFIERS - SMT
Typical Applications
The HMC580ST89 / HMC580ST89E is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Functional Diagram
General Description
The HMC580ST89 & HMC580ST89E are InGaP
Heterojunction Bipolar Transistor (HBT) Gain
Block MMIC SMT amplifiers covering DC to 1 GHz.
Packaged in an industry standard SOT89, the
amplifier can be used as a cascadable 50 Ohm RF
or IF gain stage as well as a PA or LO driver with
up to +26 dBm output power. The HMC580ST89(E)
offers 22 dB of gain with a +37 dBm output IP3 at 250
MHz, and can operate directly from a +5V supply. The
HMC580ST89(E) exhibits excellent gain and output
power stability over temperature, while requiring a
minimal number of external bias components.
Electrical Specifications,
Vs= 5.0 V, Rbias= 1.8 Ohm, T
A
= +25° C
Parameter
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 1.0 GHz
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 0.50 GHz
0.50 - 1.00 GHz
DC - 1.0 GHz
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 1.0 GHz
Min.
19
18.5
15
Typ.
22
21
17
0.005
35
28
19
12
11
23
22
20.5
19
37
35
33
2.8
88
Max.
Units
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
19
17.5
16
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
5 - 572
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC580ST89
/
580ST89E
v00.1106
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1.0 GHz
Broadband Gain & Return Loss
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
0
0.5
1
Gain vs. Temperature
24
22
20
18
GAIN (dB)
5
AMPLIFIERS - SMT
RESPONSE (dB)
S21
S11
S22
16
14
12
10
8
6
4
2
0
+25C
+85C
-40C
1.5
2
2.5
3
0
0.3
0.5
0.8
1
1.3
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
INPUT RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
-40
-45
0
0.3
0.5
0.8
1
1.3
1.5
FREQUENCY (GHz)
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
-5
-10
-15
+25C
+85C
-40C
-20
-25
0
0.3
0.5
0.8
1
1.3
1.5
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-5
-10
-15
-20
-25
-30
-35
0
0.3
0.5
0.8
1
1.3
1.5
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
+25C
+85C
-40C
+25C
+85C
-40C
7
6
5
4
3
2
1
0
0
0.3
0.5
0.8
1
1.3
1.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 57
HMC580ST89
/
580ST89E
v00.1106
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1.0 GHz
5
AMPLIFIERS - SMT
P1dB vs. Temperature
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
0.3
0.5
0.8
Psat vs. Temperature
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
0.3
0.5
0.8
P1dB (dBm)
+25C
+85C
-40C
Psat (dBm)
+25C
+85C
-40C
1
1.3
1.5
1
1.3
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
45
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc = 88 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
36
32
28
24
20
16
12
8
4
0
4.5
Gain
P1dB
Psat
OIP3
40
OIP3 (dBm)
35
30
+25C
+85C
-40C
25
20
0
0.3
0.5
0.8
1
1.3
1.5
FREQUENCY (GHz)
5
Vs (Vdc)
5.5
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, R
BIAS
= 1.8 Ohms
94
+85C
92
90
+25C
Icc (mA)
88
86
84
82
-40C
80
78
4.82
ACPR vs. Channel Output Power
-20
-25
-30
ACPR (dBc)
-35
-40
-45
-50
-55
-60
-65
WCDMA 140MHz
WCDMA 400MHz
CDMA2000 140MHz
CDMA2000 400MHz
4.83
4.84
4.85
4.86
4.87
2
4
6
8
10
12
14
16
18
Vcc (Vdc)
CHANNEL OUTPUT POWER (dBm)
5 - 574
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC580ST89
/
580ST89E
v00.1106
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFin)(Vcc = +4.2 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
+5.5 Vdc
+10 dBm
150 °C
0.59 W
110 °C/W
-65 to +150 °C
-40 to +85 °C
5
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
HMC580ST89
HMC580ST89E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H580
XXXX
H580
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 57
AMPLIFIERS - SMT
HMC580ST89
/
580ST89E
v00.1106
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1.0 GHz
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
IN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
OUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Application Circuit
Recommended Bias Resistor Values
for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V
Supply Voltage (Vs)
R
BIAS
V
ALUE
R
BIAS
P
OWER
R
ATING
6V
13 Ω
¼W
8V
36 Ω
½W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies with Vs = +5V
Frequency (MHz)
Component
50
L1
C1, C2
Rbias
270 nH
0.01 μF
0 Ohms
250
110 nH
820 pF
1.5 Ohms
400
110 nH
820 pF
1.5 Ohms
900
56 nH
100 pF
1.8 Ohms
5 - 576
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
