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HMC561LP3E

产品描述8000 MHz - 21000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
产品类别无线/射频/通信    射频和微波   
文件大小351KB,共6页
制造商Hittite Microwave(ADI)
官网地址http://www.hittite.com/
标准
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HMC561LP3E概述

8000 MHz - 21000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

8000 MHz - 21000 MHz 射频/微波宽带低功率放大器

HMC561LP3E规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Hittite Microwave(ADI)
包装说明LCC16,.12SQ,20
Reach Compliance Codecompli
ECCN代码EAR99
特性阻抗50 Ω
构造COMPONENT
最大输入功率 (CW)10 dBm
JESD-609代码e3
安装特点SURFACE MOUNT
端子数量16
最大工作频率21000 MHz
最小工作频率8000 MHz
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码LCC16,.12SQ,20
电源5 V
射频/微波设备类型WIDE BAND LOW POWER
表面贴装YES
技术GAAS
端子面层Matte Tin (Sn)

文档预览

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HMC561LP3 / 561LP3E
v00.1206
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 8 - 21 GHz OUTPUT
Features
High Output Power: +14 dBm
Low Input Power Drive: 0 to +6 dBm
Fo Isolation: 15 dBc @ Fout= 16 GHz
100 KHz SSB Phase Noise: -139 dBc/Hz
RoHS Compliant 3x3 mm SMT Package
Typical Applications
The HMC561LP3 / HMC561LP3E are suitable for:
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
• Point-to-Point & VSAT Radios
• Test Instrumentation
7
FREQUENCY MULTIPLIERS - SMT
• Military & Space
Functional Diagram
General Description
The HMC561LP3 & HMC561LP3E are x2 active
broadband frequency multipliers utilizing GaAs
PHEMT technology in a leadless RoHS compliant
SMT package. When driven by a +5 dBm signal, the
multiplier provides +14 dBm typical output power from
8 to 21 GHz and the Fo and 3Fo isolations are 15 dBc
at 16 GHz. The HMC561LP3(E) is ideal for use in LO
multiplier chains for Pt to Pt & VSAT Radios yielding
reduced parts count vs. traditional approaches. The
low additive SSB Phase Noise of -139 dBc/Hz at
100 kHz offset helps maintain good system noise
performance. The RoHS packaged HMC561LP3(E)
eliminates the need for wire bonding, and allows the
use of surface mount manufacturing techniques.
Electrical Specifications,
T
A
= +25°C, Vdd = +5V, 5 dBm Drive Level
Parameter
Frequency Range, Input
Frequency Range, Output
Output Power
Fo Isolation (with respect to output level)
3Fo Isolation (with respect to output level)
4Fo Isolation (with respect to output level)
Input Return Loss
Output Return Loss
SSB Phase Noise (100 kHz Offset)
Supply Current (Idd) (Vdd = 5V, Vgg = -1.7V Typ.)
*Adjust Vgg between -2.0 and -1.2V to achieve Idd = 98 mA
11
Min.
Typ.
4 - 10.5
8 - 21
14
15
15
20
16
8
-139
98
Max.
Units
GHz
GHz
dBm
dBc
dBc
dBc
dB
dB
dBc/Hz
mA
7 - 82
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC561LP3E相似产品对比

HMC561LP3E HMC561LP3
描述 8000 MHz - 21000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 8000 MHz - 21000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
是否无铅 不含铅 含铅
是否Rohs认证 符合 不符合
厂商名称 Hittite Microwave(ADI) Hittite Microwave(ADI)
包装说明 LCC16,.12SQ,20 LCC16,.12SQ,20
Reach Compliance Code compli compli
ECCN代码 EAR99 EAR99
特性阻抗 50 Ω 50 Ω
构造 COMPONENT COMPONENT
最大输入功率 (CW) 10 dBm 10 dBm
JESD-609代码 e3 e0
安装特点 SURFACE MOUNT SURFACE MOUNT
端子数量 16 16
最大工作频率 21000 MHz 21000 MHz
最小工作频率 8000 MHz 8000 MHz
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装等效代码 LCC16,.12SQ,20 LCC16,.12SQ,20
电源 5 V 5 V
射频/微波设备类型 WIDE BAND LOW POWER WIDE BAND LOW POWER
表面贴装 YES YES
技术 GAAS GAAS
端子面层 Matte Tin (Sn) Tin/Lead (Sn/Pb)

 
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