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70914S20JG8

产品描述Dual-Port SRAM, 4KX9, 20ns, CMOS, PQCC68, 0.950 X 0.950 X 0.170 INCH, GREEN, PLASTIC, LCC-68
产品类别存储    存储   
文件大小658KB,共12页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

70914S20JG8概述

Dual-Port SRAM, 4KX9, 20ns, CMOS, PQCC68, 0.950 X 0.950 X 0.170 INCH, GREEN, PLASTIC, LCC-68

70914S20JG8规格参数

参数名称属性值
厂商名称IDT (Integrated Device Technology)
包装说明QCCJ,
Reach Compliance Codecompliant
最长访问时间20 ns
JESD-30 代码S-PQCC-J68
长度24.13 mm
内存密度36864 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度9
功能数量1
端子数量68
字数4096 words
字数代码4000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织4KX9
封装主体材料PLASTIC/EPOXY
封装代码QCCJ
封装形状SQUARE
封装形式CHIP CARRIER
并行/串行PARALLEL
座面最大高度4.572 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式J BEND
端子节距0.5 mm
端子位置QUAD
宽度24.13 mm
Base Number Matches1

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HIGH SPEED 36K (4K X 9)
SYNCHRONOUS
DUAL-PORT RAM
Features
IDT70914S
High-speed clock-to-data output times
– Commercial: 12/15/20ns (max.)
Low-power operation
– IDT70914S
Active: 850 mW (typ.)
Standby: 50 mW (typ.)
Architecture based on Dual-Port RAM cells
– Allows full simultaneous access from both ports
Synchronous operation
– 4ns setup to clock, 1ns hold on all control, data, and address
inputs
– Data input, address, and control registers
– Fast 12ns clock to data out
– Self-timed write allows fast cycle times
– 16ns cycle times, 60MHz operation
Clock Enable feature
TTL-compatible, single 5V (+ 10%) power supply
Guaranteed data output hold times
Available in 68-pin PLCC, and 80-pin TQFP
Industrial temperature range (-40°C to +85°C) is available for
selected speeds
Green parts available, see ordering information
Functional Block Diagram
REGISTER
REGISTER
I/O
0-8L
WRITE
LOGIC
MEMOR
MEMORY
Y
ARRAY
ARRAY
WRITE
LOGIC
I/O
0-8R
SENSE
SENSE
AMPS DECODER DECODER AMPS
OE
L
CLK
L
CLKEN
L
Self-
timed
Write
Logic
REG
en
REG
en
OE
R
CLK
R
CLKEN
R
Self-
timed
Write
Logic
R/W
L
CE
L
REG
REG
R/W
R
CE
R
3490 drw 01
A
0L
-A
11L
A
0R
-A
11R
APRIL 2016
1
©2016 Integrated Device Technology, Inc.
DSC-3490/10

70914S20JG8相似产品对比

70914S20JG8 70914S12JG8 70914S15PFG8 70914S15JG8 70914S20PFG8
描述 Dual-Port SRAM, 4KX9, 20ns, CMOS, PQCC68, 0.950 X 0.950 X 0.170 INCH, GREEN, PLASTIC, LCC-68 Dual-Port SRAM, 4KX9, 12ns, CMOS, PQCC68, 0.950 X 0.950 X 0.170 INCH, GREEN, PLASTIC, LCC-68 Dual-Port SRAM, 4KX9, 15ns, CMOS, PQFP80, 14 X 14 X 1.40 MM, GREEN, TQFP-80 Dual-Port SRAM, 4KX9, 15ns, CMOS, PQCC68, 0.950 X 0.950 X 0.170 INCH, GREEN, PLASTIC, LCC-68 Dual-Port SRAM, 4KX9, 20ns, CMOS, PQFP80, 14 X 14 X 1.40 MM, GREEN, TQFP-80
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
包装说明 QCCJ, QCCJ, QFP, QCCJ, QFP,
Reach Compliance Code compliant compliant compliant compliant compliant
最长访问时间 20 ns 12 ns 15 ns 15 ns 20 ns
JESD-30 代码 S-PQCC-J68 S-PQCC-J68 S-PQFP-G80 S-PQCC-J68 S-PQFP-G80
长度 24.13 mm 24.13 mm 14 mm 24.13 mm 14 mm
内存密度 36864 bit 36864 bit 36864 bit 36864 bit 36864 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 9 9 9 9 9
功能数量 1 1 1 1 1
端子数量 68 68 80 68 80
字数 4096 words 4096 words 4096 words 4096 words 4096 words
字数代码 4000 4000 4000 4000 4000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C
组织 4KX9 4KX9 4KX9 4KX9 4KX9
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QCCJ QCCJ QFP QCCJ QFP
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER CHIP CARRIER FLATPACK CHIP CARRIER FLATPACK
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
座面最大高度 4.572 mm 4.572 mm 1.6 mm 4.572 mm 1.6 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 J BEND J BEND GULL WING J BEND GULL WING
端子位置 QUAD QUAD QUAD QUAD QUAD
宽度 24.13 mm 24.13 mm 14 mm 24.13 mm 14 mm
端子节距 0.5 mm 0.5 mm - 0.5 mm -

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