HUF75344G3, HUF75344P3, HUF75344S3S
Data Sheet
December 2004
75A, 55V, 0.008 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75344.
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- Thermal Impedance PSPICE and SABER Models
Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
HUF75344G3
HUF75344P3
HUF75344S3S
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
75344G
75344P
75344S
S
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75344S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2
HUF75344G3, HUF75344P3, HUF75344S3S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
55
55
±20
75
Figure 4
Figure 6
285
1.90
-55 to 175
300
260
UNITS
V
V
V
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
r
DS(ON)
R
θJC
R
θJA
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 11)
V
DS
= 50V, V
GS
= 0V
V
DS
= 45V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±20V
V
GS
= V
DS
, I
D
= 250µA (Figure 10)
I
D
= 75A, V
GS
= 10V (Figure 9)
(Figure 3)
TO-247
TO-220, TO-263
MIN
55
-
-
-
2
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V,
I
D
≅
75A,
R
L
= 0.4Ω
I
g(REF)
= 1.0mA
(Figure 13)
-
-
-
-
-
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
-
-
TYP
-
-
-
-
-
6.5
-
-
-
-
13
125
46
57
-
175
90
5.9
14
39
3200
1170
310
MAX
-
1
250
±100
4
8.0
0.52
30
62
187
-
-
-
-
147
210
108
7.0
-
-
-
-
-
UNITS
V
µA
µA
nA
V
mΩ
o
C/W
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
V
DD
= 30V, I
D
≅
75A,
R
L
= 0.4Ω, V
GS
=
10V,
R
GS
= 3.0Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
nC
pF
pF
pF
©2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2
HUF75344G3, HUF75344P3, HUF75344S3S
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 75A
I
SD
= 75A, dI
SD
/dt = 100A/µs
I
SD
= 75A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
-
MAX
1.25
105
210
UNITS
V
ns
nC
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
60
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
80
40
20
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
10
-1
10
0
10
1
0.01
10
-5
SINGLE PULSE
10
-4
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2
HUF75344G3, HUF75344P3, HUF75344S3S
Typical Performance Curves
2000
(Continued)
T
C
= 25
o
C
I
DM
, PEAK CURRENT (A)
1000
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 20V
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
100
50
10
-5
FIGURE 4. PEAK CURRENT CAPABILITY
1000
1000
I
AS
, AVALANCHE CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
I
D
, DRAIN CURRENT (A)
100
100µs
100
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS(MAX)
= 55V
1
1
10
100
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10ms
10
0.01
1
0.1
t
AV
, TIME IN AVALANCHE (ms)
10
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
150
V
GS
= 20V
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
V
GS
= 7V
V
GS
= 6V
90
I
D,
DRAIN CURRENT (A)
120
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
120
90
60
V
GS
= 5V
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
60
25
o
C
30
175
o
C
-55
o
C
7.5
0
0
0
1.5
3
4.5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
©2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2
HUF75344G3, HUF75344P3, HUF75344S3S
Typical Performance Curves
2.5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
2.0
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
(Continued)
1.2
V
GS
= V
DS
, I
D
= 250µA
1.5
0.8
1.0
0.6
0.5
-80
-40
0
40
80
120
160
200
0.4
-80
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
0
40
80
120
160
o
C)
T
J
, JUNCTION TEMPERATURE (
200
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
C, CAPACITANCE (pF)
4500
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
C
ISS
3000
1.1
C
OSS
1500
C
RSS
1.0
0.9
-80
-40
0
40
80
120
160
200
0
0
20
30
40
50
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
60
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 30V
8
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 75A
I
D
= 55A
I
D
= 35A
I
D
= 20A
0
25
50
75
Q
g
, GATE CHARGE (nC)
100
2
0
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2
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