Burr Brown Products
from Texas Instruments
TIV
675
OPA875
SBOS340 – DECEMBER 2006
Single 2:1 High-Speed Video Multiplexer
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
700MHz SMALL-SIGNAL BANDWIDTH
(A
V
= +2)
425MHz, 4V
PP
BANDWIDTH
0.1dB GAIN FLATNESS to 200MHz
4ns CHANNEL SWITCHING TIME
LOW SWITCHING GLITCH: 40mV
PP
3100V/µs SLEW RATE
0.025%/0.025° DIFFERENTIAL GAIN, PHASE
HIGH GAIN ACCURACY: 2.0V/V
±0.4%
DESCRIPTION
The OPA875 offers a very wideband, single-channel
2:1 multiplexer in an SO-8 or a small MSOP-8
package. Using only 11mA, the OPA875 provides a
gain of +2 video amplifier channel with > 425MHz
large-signal bandwidth (4V
PP
). Gain accuracy and
switching glitch are improved over earlier solutions
using a new input stage switching approach. This
technique uses current steering as the input switch
while maintaining an overall closed-loop design. With
> 700MHz small-signal bandwidth at a gain of 2, the
OPA875 gives a typical 0.1dB gain flatness to
> 200MHz.
System power may be reduced using the chip enable
feature for the OPA875. Taking the chip enable line
high powers down the OPA875 to < 300µA total
supply current. Muxing multiple OPA875 outputs
together, then using the chip enable to select which
channels are active, increases the number of
possible inputs.
Where three channels are required, consider using
the
OPA3875
for the same level of performance.
Out
SEL
Channel Select
APPLICATIONS
RGB SWITCHING
LCD PROJECTOR INPUT SELECT
WORKSTATION GRAPHICS
ADC INPUT MUX
DROP-IN UPGRADE TO LT1675-1
EN
Ch 0
75W
OPA875
(Patented)
75W
OPA875 RELATED PRODUCTS
DESCRIPTION
OPA3875
OPA692
OPA693
Triple-Channel OPA875
225MHz Video Buffer
700MHz Video Buffer
Ch 1
75W
2:1 Video Multiplexer
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006, Texas Instruments Incorporated
OPA875
www.ti.com
SBOS340 – DECEMBER 2006
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
ORDERING INFORMATION
PACKAGE-
LEAD
SO-8
MSOP-8
PACKAGE
DESIGNATOR
D
DGK
SPECIFIED
TEMPERATURE
RANGE
–40°C to +85°C
–40°C to +85°C
PACKAGE
MARKING
OPA875
BPL
ORDERING
NUMBER
OPA875ID
OPA875IDR
OPA875IDGKT
OPA875IDGKR
TRANSPORT
MEDIA, QUANTITY
Rails, 75
Tape and Reel, 2500
Tape and Reel, 250
Tape and Reel, 2500
PRODUCT
OPA875
OPA875
ABSOLUTE MAXIMUM RATINGS
Over operating temperature range, unless otherwise noted.
OPA875
Power Supply
Internal Power Dissipation
Input Voltage Range
Storage Temperature Range
Lead Temperature (soldering, 10s)
Operating Junction Temperature
Continuous Operating Junction Temperature
ESD Rating:
Human Body Model (HBM)
Charge Device Model (CDM)
Machine Model
2000
1500
200
V
V
V
±V
S
–40 to +125
+260
+150
+140
±6.5
See Thermal Analysis
V
°C
°C
°C
°C
UNIT
V
Table 1. TRUTH TABLE
OPA875
SELECT
1
0
X
ENABLE
0
0
1
V
OUT
R0
R1
Off
Channel 0 (V0)
GND
Channel 1 (V1)
-V
S
1
2
3
4
Top View
PIN CONFIGURATION
MSOP SO
,
OPA875
8
7
6
402W
402W
5
+V
S
Chip Enable (EN)
Output (V
OUT
)
Channel Select (SEL)
2
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OPA875
www.ti.com
SBOS340 – DECEMBER 2006
ELECTRICAL CHARACTERISTICS: V
S
=
±5V
At G = +2, R
L
= 150Ω, unless otherwise noted.
OPA875
TYP
PARAMETER
AC PERFORMANCE
Small-Signal Bandwidth
Large-Signal Bandwidth
Bandwidth for 0.1dB Gain Flatness
Maximum Small-Signal Gain
Minimum Small-Signal Gain
SFDR
Input Voltage Noise
Input Current Noise
NTSC Differential Gain
NTSC Differential Phase
Slew Rate
Rise Time and Fall Time
CONDITIONS
See Figure 1
V
O
= 200mV
PP
, R
L
= 150Ω
V
O
= 4V
PP
, R
L
= 150Ω
V
O
= 200mV
PP
V
O
= 200mV
PP
, R
L
= 150Ω, f = 5MHz
V
O
= 200mV
PP
, R
L
= 150Ω, f = 5MHz
10MHz, V
O
= 2V
PP
, R
L
= 150Ω
f > 100kHz
f > 100kHz
R
L
= 150Ω
R
L
= 150Ω
V
O
=
±2V
V
O
= 0.5V Step
V
O
= 1.4V Step
CHANNEL-TO-CHANNEL PERFORMANCE
Gain Match
Output Offset Voltage Mismatch
Crosstalk
CHANNEL AND CHIP-SELECT
PERFORMANCE
SEL (Channel Select) Switching Time
EN (Chip Select) Switching Time
R
L
= 150Ω
Turn On
Turn Off
SEL (Channel Select) Switching Glitch
EN (Chip-Select) Switching Glitch
Off Isolation
Maximum Logic 0
Minimum Logic 1
EN Logic Input Current
SEL Logic Input Current
DC PERFORMANCE
Output Offset Voltage
Average Output Offset Voltage Drift
Input Bias Current
Average Input Bias Current Drift
Gain Error (from 2V/V)
INPUT
Input Voltage Range
Input Resistance
Input Capacitance
Channel Selected
Channel Deselected
Chip Disabled
±2.8
1.75
0.9
0.9
0.9
V
MΩ
pF
pF
pF
min
typ
typ
typ
typ
C
C
C
C
C
V
O
=
±2V
0.4
1.4
±5
±18
R
IN
= 0Ω, G = +2V/V
±2.5
±14
±15.8
±50
±19.5
±40
1.5
±17
±50
±20.5
±40
1.6
mV
µV/°C
µA
nA/°C
%
max
max
max
max
max
A
B
A
B
A
Both Inputs to Ground, At Matched Load
Both Inputs to Ground, At Matched Load
50MHz, Chip Disabled (EN = High)
EN, A0, A1
EN, A0, A1
0V to 4.5V
0V to 4.5V
25
55
4
9
60
40
30
–70
0.8
2.0
35
70
0.8
2.0
45
85
0.8
2.0
50
100
ns
ns
ns
mV
PP
mV
PP
dB
V
V
µA
µA
typ
typ
typ
typ
typ
typ
max
min
max
max
C
C
C
C
C
C
A
A
A
A
f < 50MHz, R
L
= 150Ω
R
L
= 150Ω
±0.05
±3
–65
±0.25
±9
±0.3
±10
±0.35
±12
%
mV
dB
max
max
typ
A
A
C
700
425
200
2.0
2.0
–66
6.7
3.8
0.025
0.025
3100
460
600
2800
2700
2600
2.02
1.98
–64
7.0
4.2
2.03
1.97
–63
7.2
4.6
2.05
1.95
–62
7.4
4.9
525
390
515
380
505
370
MHz
MHz
MHz
V/V
V/V
dBc
nV/√Hz
pA/√Hz
%
°
V/µs
ps
ps
min
min
typ
max
min
max
max
max
typ
typ
min
typ
typ
B
B
C
B
B
B
B
B
C
C
B
C
C
+25°C
+25°C
(2)
MIN/MAX OVER
TEMPERATURE
0°C to
+70°C
(3)
–40°C to
+85°C
(3)
UNITS
MIN/
MAX
TEST
LEVEL
(1)
(1)
(2)
(3)
Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
Junction temperature = ambient for +25°C tested specifications.
Junction temperature = ambient at low temperature limit; junction temperature = ambient +14°C at high temperature limit for over
temperature specifications.
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OPA875
www.ti.com
SBOS340 – DECEMBER 2006
ELECTRICAL CHARACTERISTICS: V
S
=
±5V
(continued)
At G = +2, R
L
= 150Ω, unless otherwise noted.
OPA875
TYP
PARAMETER
OUTPUT
Output Voltage Range
Output Current
Output Resistance
V
O
= 0V, Linear Operation
Chip enabled
Chip Disabled, Maximum
Chip Disabled, Minimum
Output Capacitance
POWER SUPPLY
Specified Operating Voltage
Minimum Operating Voltage
Maximum Operating Voltage
Maximum Quiescent Current
Minimum Quiescent Current
Maximum Quiescent Current
Power-Supply Rejection Ratio
(+PSRR)
(–PSRR)
THERMAL CHARACTERISTICS
Specified Operating Range D Package
Thermal Resistance
θ
JA
D
DGK
SO-8
MSOP-8
Junction-to-Ambient
+100
+140
°C/W
°C/W
typ
typ
C
C
–40 to +85
°C
typ
C
Chip Selected, V
S
=
±5V
Chip Selected, V
S
=
±5V
Chip Deselected
Input-Referred
Input-Referred
11
11
300
56
55
±5
±3.0
±6.0
11.5
10
500
50
51
±3.0
±6.0
11.7
9.5
550
48
49
±3.0
±6.0
12
9
600
47
48
V
V
V
mA
mA
µA
dB
dB
typ
min
max
max
min
max
min
min
C
B
A
A
A
A
A
A
Chip Disabled
±3.5
±70
0.3
800
800
2
912
688
915
685
918
682
±3.4
±50
±3.35
±45
±3.3
±40
V
mA
Ω
Ω
Ω
pF
min
min
typ
max
min
typ
A
A
C
A
A
C
CONDITIONS
+25°C
+25°C
(2)
MIN/MAX OVER
TEMPERATURE
0°C to
+70°C
(3)
–40°C to
+85°C
(3)
UNITS
MIN/
MAX
TEST
LEVEL
(1)
4
Submit Documentation Feedback
OPA875
www.ti.com
SBOS340 – DECEMBER 2006
TYPICAL CHARACTERISTICS: V
S
=
±5V
At G = +2 and R
L
= 150Ω, unless otherwise noted.
SMALL-SIGNAL FREQUENCY RESPONSE
7
6
5
0.3
1
LARGE-SIGNAL FREQUENCY RESPONSE
Normalized Gain Flatness (dB)
0.2
0.1
0
-0.1
-0.2
V
O
= 500mV
PP
R
L
= 150
W
G = +2V/V
1M
10M
100M
Frequency (Hz)
1G
-0.3
-0.4
0
Normalized Gain (dB)
-1
-2
-3
-4
2V
PP
-5
-6
0
200M
400M
600M
800M
1G
Frequency (Hz)
5V
PP
Gain (dB)
4
3
2
1
0
4V
PP
500mV
PP
1V
PP
Figure 1.
NONINVERTING PULSE RESPONSE
0.5
0.4
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
-0.4
-0.5
Time (1ns/div)
100MHz Square-Wave Input
Small-Signal 0.4V
PP
R
L
= 150W
G = +2V/V
2.5
Large-Signal 4V
PP
Figure 2.
DISABLE FEEDTHROUGH vs FREQUENCY
0
Large-Signal Offset Voltage (V)
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
Small-Signal Offset Voltage (V)
-10
-20
Input-Referred
BW = +5V
Isolation (dB)
-30
-40
-50
-60
-70
-80
-90
-100
1M
10M
100M
Frequency (Hz)
1G
Figure 3.
RECOMMENDED R
S
vs CAPACITIVE LOAD
80
8
7
0.1dB Peaking Targeted
70
60
50
Figure 4.
FREQUENCY RESPONSE vs CAPACITIVE LOAD
Gain to Capacitive Load (dB)
6
5
4
3
2
1
0
-1
75W
75W
x2
C
L
= 10pF
R
S
(
W
)
40
30
20
10
0
1
10
100
1000
Capacitive Load (pF)
C
L
= 47pF
R
S
C
L
1kW
(1)
C
L
= 100pF
C
L
= 22pF
-2
-3
1M
NOTE: (1) 1k
W
is optional.
10M
Frequency (Hz)
100M
400M
Figure 5.
Figure 6.
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