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2SA1714-M-AZ

产品描述Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
产品类别分立半导体    晶体管   
文件大小141KB,共6页
制造商NEC(日电)
下载文档 详细参数 选型对比 全文预览

2SA1714-M-AZ概述

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

2SA1714-M-AZ规格参数

参数名称属性值
厂商名称NEC(日电)
包装说明FLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接COLLECTOR
最大集电极电流 (IC)3 A
集电极-发射极最大电压100 V
配置DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)2000
JEDEC-95代码TO-126
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型PNP
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

2SA1714-M-AZ相似产品对比

2SA1714-M-AZ 2SA1714-L-AZ 2SA1714-L 2SA1714-AZ 2SA1714-M 2SA1714-K 2SA1714-K-AZ
描述 Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
厂商名称 NEC(日电) NEC(日电) NEC(日电) NEC(日电) NEC(日电) NEC(日电) NEC(日电)
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown compliant unknown compliant compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 3 A 3 A 3 A 3 A 3 A 3 A 3 A
集电极-发射极最大电压 100 V 100 V 100 V 100 V 100 V 100 V 100 V
配置 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE) 2000 4000 4000 1000 2000 8000 8000
JEDEC-95代码 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1

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