Bulletin PD-20892 rev. A 10/06
30CTH03PbF
Hyperfast Rectifier
Features
•
•
•
•
•
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
Lead-Free ("PbF" suffix)
t
rr
= 36ns max.
I
F(AV)
= 30Amp
V
R
= 300V
Description/ Applications
International Rectifier's 300V series are the state of the art Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and Hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ Tc = 153°C Per Diode
Per Device
Non Repetitive Peak Surge Current @ T
J
= 25°C
Operating Junction and Storage Temperatures
Max
300
15
30
150
- 65 to 175
Units
V
A
°C
Case Styles
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-220AB
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1
30CTH03PbF
Bulletin PD-20892 rev. A
10/06
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
300
-
-
-
-
V
V
V
μA
μA
pF
nH
I
R
= 100μA
I
F
= 15A, T
J
= 25°C
I
F
= 15A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 125°C, V
R
= V
R
Rated
V
R
= 300V
Measured lead to lead 5mm from package body
1.0 1.25
0.85 0.95
-
8
38
8
40
200
-
-
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
C
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
-
-
33
48
2.8
6.5
46
160
36
30
-
-
-
-
-
-
nC
A
ns
I
F
= 1A, di
F
/dt = 50A/μs, V
R
= 30V
I
F
= 1A, di
F
/dt = 100A/μs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 15A
di
F
/dt = 200A/μs
V
R
= 200V
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
-
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Marking Device
Per Diode
Min
-
- 65
-
Typ
-
-
-
Max
175
175
1.4
Units
°C
°C/W
30CTH03
2
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30CTH03PbF
Bulletin PD-20892 rev. A
10/06
100
(mA)
100
Tj = 175˚C
10
1
0.1
0.01
0.001
0
50
100
150˚C
125˚C
100˚C
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
Tj = 175˚C
Tj = 125˚C
Reverse Current - I
F
(A)
R
150
200
250
300
10
Tj = 25˚C
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
1000
(pF)
T J = 25˚C
Junction Capacitance - C
T
100
1
0.4
10
0.6
0.8
1
1.2
1.4
1.6
0
50
100
150
200
250
300
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
(°C/W)
thJC
Thermal Impedance Z
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
Notes:
P
DM
t1
t2
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
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30CTH03PbF
Bulletin PD-20892 rev. A
10/06
180
Allowable Case Temperature (°C)
Average Power Loss ( Watts )
20
16
12
8
4
0
0
5
10
15
20
F(AV)
RMS Limit
170
DC
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
160
Square wave (D = 0.50)
150
Rated Vr applied
see note (1)
140
25
(A)
Average Forward Current - I
0
5
10
15
20
25
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
100
IF = 15A
1000
IF = 15A
Tj = 125˚C
Qrr ( nC )
trr ( ns )
Tj = 125˚C
100
Tj = 25˚C
Tj = 25˚C
Vr = 200V
Vr = 200V
10
100
di
F
/dt (A/μs )
1000
10
100
di
F
/dt (A/μs )
1000
Fig. 7 - Typical Reverse Recovery vs. di
F
/dt
Fig. 8 - Typical Stored Charge vs. di
F
/dt
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
4
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30CTH03PbF
Bulletin PD-20892 rev. A
10/06
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
di
F
/dt
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
2
Q
rr
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
di
F
/dt
f
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
x I
RRM
Q
rr
=
2
5. di
(rec) M
/ dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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