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RA28F800F3T95

产品描述Flash, 512KX16, 95ns, PBGA56, BGA-56
产品类别存储    存储   
文件大小324KB,共48页
制造商Intel(英特尔)
官网地址http://www.intel.com/
下载文档 详细参数 选型对比 全文预览

RA28F800F3T95概述

Flash, 512KX16, 95ns, PBGA56, BGA-56

RA28F800F3T95规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Intel(英特尔)
零件包装代码BGA
包装说明BGA-56
针数56
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间95 ns
其他特性MIN 100,000 BLOCK ERASE CYCLES; TOP BOOT BLOCK
启动块TOP
命令用户界面YES
数据轮询NO
JESD-30 代码R-PBGA-B56
JESD-609代码e0
内存密度8388608 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
部门数/规模8,15
端子数量56
字数524288 words
字数代码512000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-40 °C
组织512KX16
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装等效代码BGA64,8X8,32
封装形状RECTANGULAR
封装形式GRID ARRAY
页面大小4 words
并行/串行PARALLEL
电源3.3 V
编程电压3 V
认证状态Not Qualified
部门规模4K,32K
最大待机电流0.0001 A
最大压摆率0.06 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
切换位NO
类型NOR TYPE
Base Number Matches1

文档预览

下载PDF文档
3 Volt Fast Boot Block Flash Memory
28F800F3—Automotive
Preliminary Datasheet
Product Features
s
s
High Performance
— Up to 50 MHz Effective Zero Wait-State
Performance
— Synchronous Burst-Mode Reads
— Asynchronous Page-Mode Reads
SmartVoltage Technology
— 3.0 V−3.6 V Read and Write Operations for
Low Power Designs
— 12 V V
PP
Fast Factory Programming
s
s
s
Enhanced Data Protection
— Absolute Write Protection with
V
PP
= GND
— Block Locking
— Block Erase/Program Lockout during Power
Transitions
Manufactured on ETOX™ V Flash Technology
s
s
s
s
s
Supports Code Plus Data Storage
— Optimized for Flash Data Integrator (FDI)
and other Intel
®
Software
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
Flexible Blocking Architecture
— Eight 4-Kword Blocks for Data
— 32-Kword Main Blocks for Code
— Top or Bottom Boot Configurations
Extended Cycling Capability
Low Power Consumption
Automated Program and Block Erase
Algorithms
— Command User Interface for Automation
— Status Register for System Feedback
Industry-Standard Packaging
— 56-Lead SSOP
— Intel
®
Easy BGA
The Intel
®
3 Volt Fast Boot Block Flash memory offers the highest performance synchronous burst reads—
making it an ideal memory solution for burst CPUs. The Intel 3 Volt Fast Boot Block Flash memory also
supports asynchronous page mode operation for non-clocked memory subsystems. Combining high read
performance with the intrinsic nonvolatility of flash memory eliminates the traditional redundant memory
paradigm of shadowing code from a slower nonvolatile storage source to a faster execution memory device,
(e.g., SRAM SDRAM), for improved system performance. By adding 3 Volt Fast Boot Block Flash
memory to your system you could reduce the total memory requirement, which helps increase reliability
and reduce overall system power consumption—all while reducing system cost.
This family of products is manufactured on Intel
®
0.4
µm
ETOX™ V process technology. They are
available in a wide variety of industry-standard packaging technologies.
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290686-003
March 2001

RA28F800F3T95相似产品对比

RA28F800F3T95 DE28F800F3B95 RA28F800F3B80 RA28F800F3T80 RA28F800F3B95
描述 Flash, 512KX16, 95ns, PBGA56, BGA-56 Flash, 512KX16, 95ns, PDSO56, 16 X 23.70 MM, SSOP-56 Flash, 512KX16, 80ns, PBGA56, BGA-56 Flash, 512KX16, 80ns, PBGA56, BGA-56 Flash, 512KX16, 95ns, PBGA56, BGA-56
是否Rohs认证 不符合 不符合 不符合 不符合 不符合
厂商名称 Intel(英特尔) Intel(英特尔) Intel(英特尔) Intel(英特尔) Intel(英特尔)
零件包装代码 BGA SSOP BGA BGA BGA
包装说明 BGA-56 16 X 23.70 MM, SSOP-56 BGA-56 BGA-56 BGA-56
针数 56 56 56 56 56
Reach Compliance Code unknown unknown unknown unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 95 ns 95 ns 80 ns 80 ns 95 ns
其他特性 MIN 100,000 BLOCK ERASE CYCLES; TOP BOOT BLOCK BOTTOM BOOT BLOCK BOTTOM BOOT BLOCK TOP BOOT BLOCK MIN 100,000 BLOCK ERASE CYCLES; BOTTOM BOOT BLOCK
启动块 TOP BOTTOM BOTTOM TOP BOTTOM
命令用户界面 YES YES YES YES YES
数据轮询 NO NO NO NO NO
JESD-30 代码 R-PBGA-B56 R-PDSO-G56 R-PBGA-B56 R-PBGA-B56 R-PBGA-B56
JESD-609代码 e0 e0 e0 e0 e0
内存密度 8388608 bit 8388608 bit 8388608 bit 8388608 bi 8388608 bi
内存集成电路类型 FLASH FLASH FLASH FLASH FLASH
内存宽度 16 16 16 16 16
功能数量 1 1 1 1 1
部门数/规模 8,15 8,15 8,15 8,15 8,15
端子数量 56 56 56 56 56
字数 524288 words 524288 words 524288 words 524288 words 524288 words
字数代码 512000 512000 512000 512000 512000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C
组织 512KX16 512KX16 512KX16 512KX16 512KX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 BGA SSOP BGA BGA BGA
封装等效代码 BGA64,8X8,32 SOP56,.6,32 BGA64,8X8,32 BGA64,8X8,32 BGA64,8X8,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY SMALL OUTLINE, SHRINK PITCH GRID ARRAY GRID ARRAY GRID ARRAY
页面大小 4 words 4 words 4 words 4 words 4 words
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
编程电压 3 V 3 V 3 V 3 V 3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
部门规模 4K,32K 4K,32K 4K,32K 4K,32K 4K,32K
最大待机电流 0.0001 A 0.0001 A 0.0001 A 0.0001 A 0.0001 A
最大压摆率 0.06 mA 0.06 mA 0.06 mA 0.06 mA 0.06 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 BALL GULL WING BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM DUAL BOTTOM BOTTOM BOTTOM
切换位 NO NO NO NO NO
类型 NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE

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