10.0-40.0 GHz GaAs MMIC
Distributed Amplifier
December 2006 - Rev 19-Dec-06
D1004-BD
Features
Ultra Wide Band Driver Amplifier
Self Biased Architecture
17.0 dB Small Signal Gain
5.0 dB Noise Figure
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
XD1004-BD
General Description
Mimix Broadband’s 10.0-40.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 17.0 dB
with a noise figure of 5.0 dB. This MMIC uses Mimix
Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well
suited for microwave, millimeter-wave, wideband
military, and fiber optic applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
175 mA
+17 dBm
-65 to +165
O
C
2
-55 to MTTF Table
MTTF Table
2
(2) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression Point (P1dB)
1
Drain Bias Voltage (Vd)
Supply Current (Id) (Vd=5.0V)
(1) Measured using constant current.
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
VDC
mA
Min.
10.0
-
-
-
-
-
-
-
-
-
Typ.
-
7.0
12.0
17.0
+/-2.5
30.0
5.0
TBD
+5.0
115
Max.
40.0
-
-
-
-
-
-
-
+5.5
145
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-40.0 GHz GaAs MMIC
Distributed Amplifier
December 2006 - Rev 19-Dec-06
D1004-BD
Distributed Amplifier Measurements
XD1004-BD Vd=See Legend, Id=See Legend
22
20
18
16
Gain (dB)
XD1004-BD Vd=See Legend, Id=See Legend
0
-10
-20
-30
-40
-50
-60
-70
-80
14
12
10
8
6
4
2
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48
Frequency (GHz)
Vd=3.0V, Id=100 mA
Vd=4.0V, Id=120 mA
Vd=5.0V, Id=115 mA
Reverse Isolation (dB)
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48
Frequency (GHz)
Vd=3.0V, Id=100 mA
Vd=4.0V, Id=120 mA
Vd=5.0V, Id=115 mA
XD1004-BD Vd=See Legend, Id=See Legend
0
-5
-10
-15
-20
-25
-30
-35
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48
Frequency (GHz)
Vd=3.0V, Id=100 mA
Vd=4.0V, Id=120 mA
Vd=5.0V, Id=115 mA
Output Return Loss (dB)
0
-5
-10
-15
-20
-25
-30
-35
-40
XD1004-BD Vd=See Legend, Id=See Legend
Input Return Loss (dB)
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48
Frequency (GHz)
Vd=3.0V, Id=100 mA
Vd=4.0V, Id=120 mA
Vd=5.0V, Id=115 mA
XD1004-BD Vd=5.0, Id=115 mA
10
10
XD1004-BD Vd=See Legend, Id=See Legend
9
8
9
8
7
Noise Figure (dB)
Noise Figure (dB)
7
6
5
4
3
2
6
5
4
3
2
1
1
0
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
0
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
Vd=3.0V, Id=100 mA
Vd=4.0V, Id=120 mA
Vd=5.0V, Id=115 mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-40.0 GHz GaAs MMIC
Distributed Amplifier
December 2006 - Rev 19-Dec-06
D1004-BD
S-Parameters
Typcial S-Parameter Data for XD1004-BD
Vd=5.0 V Id=115 mA
Frequency
(GHz)
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
44.0
45.0
46.0
47.0
48.0
S11
(Mag)
0.266
0.327
0.377
0.424
0.433
0.412
0.409
0.408
0.425
0.443
0.429
0.393
0.351
0.302
0.223
0.109
0.082
0.177
0.308
0.414
0.488
0.545
0.563
0.551
0.514
0.473
0.430
0.371
0.324
0.268
0.156
0.111
0.478
0.733
0.784
0.807
0.819
0.818
0.814
0.786
0.760
S11
(Ang)
-84.45
-91.33
-101.79
-115.11
-126.57
-135.70
-139.41
-144.24
-148.34
-158.58
-168.79
-178.03
174.97
165.61
159.38
167.48
-136.03
-104.33
-108.68
-122.58
-134.12
-149.53
-160.84
-170.23
-179.06
175.85
171.06
163.46
159.72
149.53
127.96
-1.01
-67.43
-116.92
-134.69
-147.18
-158.53
-165.72
-173.65
175.95
165.30
S21
(Mag)
2.817
3.905
5.149
6.898
8.344
9.429
10.013
9.785
9.206
8.446
7.880
7.447
7.231
7.260
7.405
7.721
7.961
8.048
8.049
7.843
7.618
7.229
6.955
6.762
6.558
6.405
6.263
6.137
6.172
6.316
6.684
6.681
6.830
4.453
2.919
1.993
1.406
1.022
0.808
0.657
0.665
S21
(Ang)
79.53
52.25
25.97
-6.89
-34.99
-64.24
-92.80
-120.19
-143.62
-169.45
172.65
156.62
141.98
126.80
111.79
91.59
73.39
54.71
35.90
16.71
-2.03
-24.45
-41.89
-59.40
-76.39
-93.81
-111.51
-134.09
-152.84
-172.87
163.95
134.93
98.74
49.92
24.62
4.19
-13.99
-29.20
-42.51
-60.82
-75.14
S12
(Mag)
0.0028
0.0029
0.0041
0.0054
0.0052
0.0036
0.0040
0.0027
0.0002
0.0024
0.0017
0.0019
0.0016
0.0029
0.0053
0.0082
0.0129
0.0169
0.0204
0.0216
0.0250
0.0282
0.0289
0.0302
0.0314
0.0327
0.0332
0.0336
0.0297
0.0267
0.0194
0.0087
0.0160
0.0280
0.0329
0.0385
0.0396
0.0364
0.0368
0.0399
0.0353
S12
(Ang)
-71.28
-91.04
-105.02
-143.98
-164.64
167.86
162.52
128.36
108.13
-117.53
-170.59
131.67
-20.62
-73.56
-69.71
-83.98
-96.11
-112.12
-129.34
-137.60
-148.72
-160.89
-170.71
-176.93
175.02
168.19
159.36
145.03
132.80
118.95
98.26
27.65
-109.83
-154.33
-165.52
-178.14
163.90
161.74
160.26
150.91
138.11
S22
(Mag)
0.329
0.270
0.255
0.287
0.332
0.374
0.415
0.406
0.392
0.362
0.317
0.275
0.242
0.212
0.176
0.141
0.114
0.095
0.109
0.128
0.141
0.156
0.155
0.141
0.118
0.092
0.073
0.064
0.064
0.090
0.146
0.263
0.405
0.449
0.450
0.454
0.437
0.419
0.430
0.455
0.451
S22
(Ang)
75.78
55.13
34.10
3.96
-21.03
-46.40
-71.95
-94.54
-112.14
-132.18
-145.22
-156.40
-163.29
-171.23
-174.25
-174.45
-172.92
-163.22
-145.40
-147.14
-150.12
-159.55
-170.40
179.45
170.74
165.96
160.02
158.77
152.46
132.61
98.18
58.18
14.95
-29.19
-49.46
-64.80
-76.65
-83.59
-83.85
-95.96
-98.88
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page
3
of 6
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-40.0 GHz GaAs MMIC
Distributed Amplifier
December 2006 - Rev 19-Dec-06
D1004-BD
Mechanical Drawing
1.250
(0.049)
XD1004-BD
1.070
(0.042)
1
2
1.102
(0.043)
0.0
0.0
3
1.000
0.820
(0.039)
(0.032)
(Note: Engineering designator is 22DSBA0423)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 0.775 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (RF Out)
Bond Pad #3 (Vd)
Bias Arrangement
XD1004-BD
RF In
1
2
RF Out
Bypass Capacitors
- See App
Note
[2]
3
Vd
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
10.0-40.0 GHz GaAs MMIC
Distributed Amplifier
December 2006 - Rev 19-Dec-06
D1004-BD
App Note [1] Biasing
- As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain
bias. Bias is nominally Vd=5V, Id=115 mA.
App Note [2] Bias Arrangement
- Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Graphs
1.00E+09
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
XD1004-BD Vd=5.0 V Id=115 mA
1.00E+04
XD1004-BD Vd=5.0 V Id=115 mA
1.00E+08
1.00E+03
MTTF (hours)
1.00E+07
FITS
1.00E+02
1.00E+06
1.00E+01
1.00E+05
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
1.00E+00
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
XD1004-BD Vd=5.0 V Id=115 mA
114
113
112
111
110
109
108
107
106
105
104
103
102
101
100
99
98
97
96
95
94
93
92
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
200
190
180
170
XD1004-BD Vd=5.0 V Id=115 mA
Rth (deg C/W)
Tch (deg C)
160
150
140
130
120
110
100
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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