DATASHEET

HIP2100

100V/2A Peak, Low Cost, High Frequency Half Bridge Driver

The HIP2100 is a high frequency, 100V Half Bridge

N-Channel power MOSFET driver IC. The low-side and

high-side gate drivers are independently controlled and

matched to 8ns. This gives the user maximum flexibility in

dead-time selection and driver protocol. Undervoltage

protection on both the low-side and high-side supplies force

the outputs low. An on-chip diode eliminates the discrete

diode required with other driver ICs. A new level-shifter

topology yields the low-power benefits of pulsed operation

with the safety of DC operation. Unlike some competitors,

the high-side output returns to its correct state after a

momentary undervoltage of the high-side supply.

FN4022

Rev 15.00

August 31, 2015

Features

• Drives N-Channel MOSFET Half Bridge

• SOIC, EPSOIC, QFN and DFN Package Options

• SOIC, EPSOIC and DFN Packages Compliant with 100V

Conductor Spacing Guidelines of IPC-2221

• Pb-Free Product Available (RoHS Compliant)

• Bootstrap Supply Max Voltage to 114VDC

• On-Chip 1 Bootstrap Diode

• Fast Propagation Times for Multi-MHz Circuits

• Drives 1000pF Load with Rise and Fall Times Typ. 10ns

• CMOS Input Thresholds for Improved Noise Immunity

• Independent Inputs for Non-Half Bridge Topologies

• No Start-Up Problems

• Outputs Unaffected by Supply Glitches, HS Ringing Below

Ground, or HS Slewing at High dv/dt

• Low Power Consumption

• Wide Supply Range

• Supply Undervoltage Protection

• 3 Driver Output Resistance

• QFN/DFN Package:

- Compliant to JEDEC PUB95 MO-220

QFN - Quad Flat No Leads - Package Outline

- Near Chip Scale Package Footprint, which Improves

PCB Efficiency and has a Thinner Profile

-

Applications

• Telecom Half Bridge Power Supplies

• Avionics DC/DC Converters

• Two-Switch Forward Converters

• Active Clamp Forward Converters

Ordering Information

PART NUMBER

(Note 1)

HIP2100IB

(No longer available,

recommended replacements: HIP2100IBZ, HIP2100IBZT)

HIP2100IBZ (Note 2)

HIP2100EIBZ (Note 2)

HIP2100IRZ (Note 2)

HIP2100IR4Z (Note 2)

(No longer available,

recommended replacements: HIP2100IRZ, HIP2100IRZT)

NOTES:

1. Add “T” suffix for tape and reel. Please refer to TB347 for details on reel specifications.

2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte

tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil

Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J

STD-020.

PART

MARKING

2100 IB

2100 IBZ

2100 EIBZ

HIP 2100IRZ

21 00IR4Z

TEMP. RANGE

(°C)

-40 to +125

PACKAGE

8 Ld SOIC

8 Ld SOIC (Pb-free)

8 Ld EPSOIC (Pb-free)

16 Ld 5x5 QFN (Pb-free)

12 Ld 4x4 DFN (Pb-free)

PKG.

DWG. #

M8.15

M8.15C

L16.5x5

L12.4x4A

FN4022 Rev 15.00

August 31, 2015

Page 1 of 13

HIP2100

Pinouts

HIP2100

(8 LD SOIC, EPSOIC)

TOP VIEW

V

DD

HB

HO

HS

1

2

3

4

EPAD

8

7

6

5

LO

V

SS

LI

HI

V

DD

NC

HB

1

2

3

4

EPAD

O

E

HIP2100IR4

(12 LD DFN)

TOP VIEW

12 LO

11 V

SS

10

POR

P

NC

9

8

7

NC

LI

HI

HIP2100

(16 LD QFN)

TOP VIEW

V

DD

NC

13

12 NC

EPAD

HO 3

NC 4

5

NC

6

HS

7

HI

8

NC

11 V

SS

10 LI

9

NC

LO

14

16

15

NOTE: EPAD = Exposed PAD.

HO

GER

5

LON

NO

HS 6

ABL

AIL

AV

U

RS

)

TED

NC 1

HB 2

Application Block Diagram

+12V

+100V

V

DD

HB

SECONDARY

CIRCUIT

HI

CONTROL

PWM

CONTROLLER

LI

DRIVE

HI

HO

HS

DRIVE

LO

HIP2100

V

SS

REFERENCE

AND

ISOLATION

FN4022 Rev 15.00

August 31, 2015

Page 2 of 13

HIP2100

Functional Block Diagram

HB

V

DD

UNDER

VOLTAGE

LEVEL SHIFT

DRIVER

HS

HI

HO

UNDER

VOLTAGE

DRIVER

LI

V

SS

LO

EPAD (EPSOIC, QFN and DFN PACKAGES ONLY)

*EPAD = Exposed Pad. The EPAD is electrically isolated from all other pins. For best

thermal performance connect the EPAD to the PCB power ground plane.

+48V

+12V

PWM

HIP2100

SECONDARY

CIRCUIT

ISOLATION

FIGURE 1. TWO-SWITCH FORWARD CONVERTER

+48V

+12V

SECONDARY

CIRCUIT

PWM

HIP2100

ISOLATION

FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE CLAMP

FN4022 Rev 15.00

August 31, 2015

Page 3 of 13

HIP2100

Absolute Maximum Ratings

Supply Voltage, V

DD,

V

HB

-V

HS

(Notes 3, 4) . . . . . . . . -0.3V to 18V

LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . -0.3V to V

DD

+0.3V

Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to V

DD

+0.3V

Voltage on HO (Note 4) . . . . . . . . . . . . . . . V

HS

-0.3V to V

HB

+0.3V

Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V

Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V

Average Current in V

DD

to HB diode . . . . . . . . . . . . . . . . . . . 100mA

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)

Thermal Information

Thermal Resistance (Typical)



JA

(°C/W)



JC

(°C/W)

SOIC (Note 5) . . . . . . . . . . . . . . . . . . .

95

50

EPSOIC (Note 6) . . . . . . . . . . . . . . . . .

40

3.0

QFN (Note 6) . . . . . . . . . . . . . . . . . . . .

37

6.5

DFN (Note 6) . . . . . . . . . . . . . . . . . . . .

40

3.0

Max Power Dissipation at +25°C in Free Air (SOIC, Note 5) . . . . 1.3W

Max Power Dissipation at +25°C in Free Air (EPSOIC, Note 6) . . 3.1W

Max Power Dissipation at +25°C in Free Air (QFN, Note 6) . . . . . 3.3W

Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C

Junction Temperature Range. . . . . . . . . . . . . . . . . .-55°C to +150°C

Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below

http://www.intersil.com/pbfree/Pb-FreeReflow.asp

Maximum Recommended Operating Conditions

Supply Voltage, V

DD

. . . . . . . . . . . . . . . . . . . . . . . . +9V to 14.0VDC

Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V

Voltage on HS. . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V

Voltage on HB . . . V

HS

+8V to V

HS

+14.0V and V

DD

-1V to V

DD

+100V

HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and

result in failures not covered by warranty.

NOTES:

3. The HIP2100 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this

mode of operation.

4. All voltages referenced to V

SS

unless otherwise specified.

5.



JA

is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

6.



JA

is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.



JC,

the

“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.

Electrical Specifications

V

DD

= V

HB

= 12V, V

SS

= V

HS

= 0V, No Load on LO or HO, Unless Otherwise Specified.

T

J

= +25°C

T

J

= -40°C TO +125°C

MIN

(Note 7)

MAX

(Note 7)

UNITS

PARAMETERS

SUPPLY CURRENTS

V

DD

Quiescent Current

V

DD

Operating Current

Total HB Quiescent Current

Total HB Operating Current

HB to V

SS

Current, Quiescent

HB to V

SS

Current, Operating

INPUT PINS

Low Level Input Voltage Threshold

High Level Input Voltage Threshold

Input Voltage Hysteresis

Input Pulldown Resistance

UNDERVOLTAGE PROTECTION

V

DD

Rising Threshold

V

DD

Threshold Hysteresis

HB Rising Threshold

HB Threshold Hysteresis

SYMBOL

TEST CONDITIONS

MIN TYP MAX

I

DD

I

DDO

I

HB

I

HBO

I

HBS

I

HBSO

LI = HI = 0V

f = 500kHz

LI = HI = 0V

f = 500kHz

V

HS

= V

HB

= 114V

f = 500kHz

-

0.1

1.5

0.1

1.5

0.05

0.7

0.15

2.5

0.15

2.5

1

-

0.2

3

0.2

3

10

-

mA

µA

mA

V

IL

V

IH

V

IHYS

R

I

4

-

5.4

5.8

0.4

200

-

7

-

3

-

100

-

8

-

500

V

k

V

DDR

V

DDH

V

HBR

V

HBH

7

-

6.5

-

7.3

0.5

6.9

0.4

7.8

-

7.5

-

6.5

-

6

-

8

-

8

-

V

FN4022 Rev 15.00

August 31, 2015

Page 4 of 13

HIP2100

Electrical Specifications

V

DD

= V

HB

= 12V, V

SS

= V

HS

= 0V, No Load on LO or HO, Unless Otherwise Specified.

(Continued)

T

J

= +25°C

PARAMETERS

BOOT STRAP DIODE

Low-Current Forward Voltage

High-Current Forward Voltage

Dynamic Resistance

LO GATE DRIVER

Low Level Output Voltage

High Level Output Voltage

Peak Pullup Current

Peak Pulldown Current

HO GATE DRIVER

Low Level Output Voltage

High Level Output Voltage

Peak Pullup Current

Peak Pulldown Current

V

OLH

V

OHH

I

OHH

I

OLH

I

HO

= 100mA

I

HO

= -100mA, V

OHH

= V

HB

-V

HO

V

HO

= 0V

V

HO

= 12V

-

0.25

2

0.3

-

0.4

-

V

A

V

OLL

V

OHL

I

OHL

I

OLL

I

LO

= 100mA

I

LO

= -100mA, V

OHL

= V

DD

-V

LO

V

LO

= 0V

V

LO

= 12V

-

0.25

2

0.3

-

0.4

-

V

A

V

DL

V

DH

R

D

I

VDD-HB

= 100µA

I

VDD-HB

= 100mA

I

VDD-HB

= 100mA

-

0.45 0.55

0.7

0.8

1

-

0.7

1

1.5

V



SYMBOL

TEST CONDITIONS

MIN TYP MAX

T

J

= -40°C TO +125°C

MIN

(Note 7)

MAX

(Note 7)

UNITS

Switching Specifications

V

DD

= V

HB

= 12V, V

SS

= V

HS

= 0V, No Load on LO or HO, Unless Otherwise Specified.

T

J

= +25°C

T

J

= -40°C TO

+125°C

MIN

(Note 7)

-

MAX

(Note 7)

45

10

-

0.8

-

50

-

UNITS

ns

µs

ns

PARAMETERS

Lower Turn-Off Propagation Delay (LI Falling to LO Falling)

Upper Turn-Off Propagation Delay (HI Falling to HO Falling)

Lower Turn-On Propagation Delay (LI Rising to LO Rising)

Upper Turn-On Propagation Delay (HI Rising to HO Rising)

Delay Matching: Lower Turn-On and Upper Turn-Off

Delay Matching: Lower Turn-Off and Upper Turn-On

Either Output Rise/Fall Time

Either Output Rise/Fall Time (3V to 9V)

Either Output Rise Time Driving DMOS

Either Output Fall Time Driving DMOS

Minimum Input Pulse Width that Changes the Output

Bootstrap Diode Turn-On or Turn-Off Time

NOTE:

SYMBOL

t

LPHL

t

HPHL

t

LPLH

t

HPLH

t

MON

t

MOFF

t

RC

, t

FC

t

R

, t

F

t

RD

t

FD

t

PW

t

BS

TEST

CONDITIONS

MIN TYP MAX

-

20

2

10

0.5

20

10

-

10

35

8

-

0.6

-

C

L

= 1000pF

C

L

= 0.1µF

C

L

= IRFR120

C

L

= IRFR120

-

7. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization

and are not production tested.

FN4022 Rev 15.00

August 31, 2015

Page 5 of 13

参数名称	属性值
功能数量	1
端子数量	8
最大工作温度	125 Cel
最小工作温度	-40 Cel
最大供电电压1	14 V
最小供电电压1	9 V
额定供电电压1	12 V
导通时间	0.0450 us
关断时间	0.0450 us
加工封装描述	ROHS COMPLIANT, 塑料, MS-012AA, SOIC-8
无铅	Yes
欧盟RoHS规范	Yes
状态	ACTIVE
包装形状	矩形的
包装尺寸	SMALL OUTLINE
表面贴装	Yes
端子形式	GULL WING
端子间距	1.27 mm
端子涂层	MATTE 锡
端子位置	双
包装材料	塑料/环氧树脂
温度等级	AUTOMOTIVE
高端驱动器	Yes
接口类型	半桥场效应管驱动器
额定输出峰值电流限制	2 A

HIP2100EIB

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