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1N5711WS_1

产品描述0.015 A, 70 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小71KB,共3页
制造商Diodes
官网地址http://www.diodes.com/
下载文档 详细参数 选型对比 全文预览

1N5711WS_1概述

0.015 A, 70 V, SILICON, SIGNAL DIODE

0.015 A, 70 V, 硅, 信号二极管

1N5711WS_1规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述GREEN, PLASTIC PACKAGE-2
无铅Yes
欧盟RoHS规范Yes
中国RoHS规范Yes
状态ACTIVE
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式GULL WING
端子涂层MATTE TIN
端子位置DUAL
包装材料PLASTIC/EPOXY
工艺SCHOTTKY
结构SINGLE
二极管元件材料SILICON
最大功耗极限0.1500 W
二极管类型SIGNAL DIODE
反向恢复时间最大1.00E-3 us
最大重复峰值反向电压70 V
最大平均正向电流0.0150 A

文档预览

下载PDF文档
1N5711WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Please click here to visit our online spice models database.
Features
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
Fast Switching Speed
Low Capacitance
Surface Mount Package Ideally Suited for Automated Insertion
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Mechanical Data
Case: SOD-323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: Cathode Band
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.004 grams (approximate)
Top View
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
Value
70
49
15
Unit
V
V
mA
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
T
STG
Value
150
650
-55 to +125
-55 to +150
Unit
mW
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Reverse Leakage Current (Note 2)
Forward Voltage Drop
Total Capacitance
Reverse Recovery Time
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
I
R
V
F
C
T
t
rr
Min
70
Typ
Max
200
0.41
1.00
2.0
1.0
Unit
V
nA
V
pF
ns
Test Conditions
I
R
= 10μA
V
R
= 50V
I
F
= 1.0mA
I
F
= 15mA
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 5.0mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
1N5711WS
Document number: DS31033 Rev. 12 - 2
1 of 3
www.diodes.com
July 2008
© Diodes Incorporated

1N5711WS_1相似产品对比

1N5711WS_1 1N5711WS
描述 0.015 A, 70 V, SILICON, SIGNAL DIODE 0.015 A, 70 V, SILICON, SIGNAL DIODE

 
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