SMART
Features
•
•
•
•
•
•
•
•
•
•
•
®
SM5320430U4XSUU
April 2, 1998
Modular Technologies
16MByte (4M x 32) DRAM Module - 4Mx16 based
72-pin SODIMM
Part Numbers
SM532043014XSUU
SM532043094XSUU
:
:
Standard
: JEDEC
Configuration
: Non-parity
Access Time
: 50/60/70ns
Operation Mode
: FPM/EDO
Operating Voltage : 3.3V
Refresh
: 4K
Device Physicals
: 400mil TSOP
Lead Finish
: Gold/Solder
Length x Height
: 2.350" x 1.000"
No. of sides
: Single-sided
Mating Connector (Examples)
Horizontal
: AMP-177827-1 (3.3V, Gold)
AMP-177827-2 (3.3V, Tin)
FPM, 3.3V
EDO, 3.3V
Note: Refer last page for all "U” options.
Related Products
SM5320880U4XSUU
:
8Mx32,
8Mx8 based.
Functional Diagram
CAS1#
CAS0#
RAS0#
4Mx16
DRAM
4Mx16
DRAM
CAS2#
CAS3#
RAS2#
DQ0~DQ15
DQ16~DQ31
DQ0~DQ31
Notes : 1. A0~A11 to all DRAMs.
2. WE# to all DRAMs.
3. OE# of all DRAMs is grounded.
V
CC
V
SS
Decoupling capacitors
to all devices.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
SMART
Pin Name
A0~A11
A0~A9
DQ0~DQ31
RAS0#, RAS2#
CAS0#~CAS3#
WE#
PD1~PD7
V
CC
V
SS
NC
®
SM5320430U4XSUU
April 2, 1998
Modular Technologies
Pin
No.
Row Addresses for 4K
Refresh Module
Column Addresses for
4K Refresh Module
Data Inputs/Outputs
Row Address Strobes
Column Address Strobes
Write Enable
Presence Detects
Power Supply
Ground
No Connection
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
Pin
Designation
V
SS
DQ1
DQ3
DQ5
DQ7
PD1
A1
A3
A5
A10
DQ8
DQ10
DQ12
DQ14
A11
A8
NC
DQ15
DQ16
V
SS
CAS2#
CAS1#
NC
WE#
DQ18
DQ20
DQ22
NC
DQ25
DQ28
V
CC
DQ30
NC
PD3
PD5
PD7
Pin
No.
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
Pin
Designation
DQ0
DQ2
DQ4
DQ6
V
CC
A0
A2
A4
A6
NC
DQ9
DQ11
DQ13
A7
V
CC
A9
RAS2#
NC
DQ17
CAS0#
CAS3#
RAS0#
NC
NC
DQ19
DQ21
DQ23
DQ24
DQ26
DQ27
DQ29
DQ31
PD2
PD4
PD6
V
SS
Presence Detect Pins
Access Time
60ns
70ns
NC
NC
NC
NC
V
SS
V
SS
NC
NC
NC
V
SS
NC
NC
NC
NC
Pin
PD1
PD2
PD3
PD4
PD5
PD6
PD7
50ns
NC
NC
V
SS
NC
V
SS
V
SS
NC
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
SMART
FPM & EDO-based Modules
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
®
SM5320430U4XSUU
April 2, 1998
Modular Technologies
DC Characteristics
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
- 0.5 to +4.6
2
0 to +70
- 55 to +125
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
0.8
Unit
V
V
V
V
Capacitance
(V
CC
= 3.3V
±
0.3V, T
A
= +25
°
C)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS#, CAS#)
Input Capacitance (WE#)
Input/Output Capacitance (DQ0~DQ31)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I3
C
I/O
Max
20
17
24
17
Unit
pF
pF
pF
pF
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
SMART
®
SM5320430U4XSUU
April 2, 1998
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
2.4
-
-
0.4 -
2.4
0.4
-
2.4
-
-
0.4
V
V
50ns
60ns
Min Max Min Max
-20
20 -20
20
-10
10
-10
10
70ns
Min Max
-20 20
-10
10
Unit
µ
A
µ
A
FPM-based Modules
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=VIH; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=VIL, CAS#, Address
cycling @ t
PC
=min.
50ns
300
Max.
60ns
280
Unit
70ns
260
mA
Note
1, 2
4
4
4
mA
Standby Current
I
CC2
2
300
300
180
2
280
280
160
2
260
260
140
mA
mA
mA
mA
1, 3
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = VIL .
3. Address can be changed once or less while CAS# = VIH .
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
SMART
EDO-based Modules
®
SM5320430U4XSUU
April 2, 1998
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
HPC
=min.
50ns
300
Max.
60ns
280
Unit
70ns
260
mA
Note
1, 2
4
4
4
mA
Standby Current
I
CC2
2
300
300
240
2
280
280
220
2
260
260
200
mA
mA
mA
mA
1, 3
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Hyper Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = VIL .
3. Address can be changed once or less while CAS# = VIH .
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
