1N5822U
Aerospace 40 V power Schottky rectifier
Datasheet
-
production data
Description
A
K
K
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2B
package whose footprint is 100% compatible with
industry standard solutions in D5B.
The 1N5822U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
A
Leadless chip carrier 2 (LCC2B)
Features
Aerospace applications
Surface mount hermetic package
High thermal conductivity materials
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Package mass: 0.18 g
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
ESCC qualified
ESCC
detailed
specification
Table 1. Device summary
(1)
Quality level
Lead
finish
EPPL
I
F(AV)
V
RRM
T
j(max)
VF
(max)
Order code
1N5822UB1
Engineering model Gold
ESCC
ESCC
Gold
Solder dip
yes
3
40
150
0.485
1N5822U01B 5106/020/01
1N5822U02B 5106/020/02
1. Contact ST sales office for information about the specific conditions for products in die form.
November 2013
This is information on a product in full production.
DocID16007 Rev 3
1/9
www.st.com
Characteristics
1N5822U
1
Characteristics
Table 2. Absolute ratings (limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
T
sol
dPtot
---------------
dTj
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward rectified current
Forward surge current
Storage temperature range
Maximum operating junction temperature
(1)
Maximum soldering temperature
(2)
T
c
≥
139 °C
δ
= 0.5
t
p
= 10 ms sinusoidal
Value
40
10
3
80
-65 to +150
150
245
Unit
V
A
A
A
°C
°C
°C
1.
1
--------------------------
condition to avoid thermal runaway for a diode on its own heatsink
Rth
j
–
a
2. Maximum duration 5 s. The same package must not be re-soldered until 3 minutes have elapsed.
Table 3. Thermal resistance
Symbol
R
th (j-c)
Junction to case
Parameter
Value
7
Unit
C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
T
j
= -55 °C
I
R (1)
Reverse current
T
j
= 25 °C
T
j
= 100 °C
T
j
= 25
C
T
j
= -55
C
V
F (2)
Forward voltage
T
j
= 25
C
T
j
= 100
C
T
j
= 25
C
1. Pulse test: t
p
= 5 ms,
δ
< 2%
2. Pulse test: t
p
= 680 µs,
δ
< 2%
Min.
-
Typ.
-
-
-
-
-
-
-
-
Max.
40
Unit
µA
V
R
= 40 V
-
-
80
12
0.4
0.56
0.485
0.455
0.70
V
mA
I
F
= 1A
-
-
I
F
= 3 A
-
-
I
F
= 9.4 A
-
To evaluate the conduction losses use the following equation:
P = 0.32 x
IF(AV)
+ 0.050 x I
F2(RMS )
Table 5. Dynamic characteristics
Symbol
C
j
Parameter
Diode capacitance
Test conditions
V
R
= 5 V, F = 1 MHz
Min. Typ. Max. Unit
-
-
240
pF
2/9
DocID16007 Rev 3
1N5822U
Characteristics
Figure 1. Average forward power dissipation
versus average forward current
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
Figure 2. Average forward current versus
ambient temperature ( = 0.5)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
T
R
th(j-a)
=120 °C/W
PF(av)(W)
δ
=0.05
δ
=0.1
δ
=0.2
δ
=0.5
δ
=1
IF(av)(A)
R
th(j-a)
=R
th(j-c)
IF(av) (A)
δ
=tp/T
tp
δ
=tp/T
tp
Tamb(°C)
50
75
100
125
150
0.0
0
25
Figure 3. Non repetitive surge peak forward
current versus overload duration (maximum
values)
50
45
40
35
30
25
20
15
10
5
0
1.E-03
1.E-02
1.E-01
1.E+00
I
M
t
δ
=0.5
Figure 4. Relative variation of thermal
impedance junction to case versus pulse
duration
1.0
0.9
0.8
0.7
0.6
IM(A)
Zth(j-c)/Rth(j-c)
T
c
=25 °C
T
c
=75 °C
0.5
0.4
0.3
T
c
=125 °C
0.2
0.1
0.0
Single pulse
t(s)
tp(s)
1.E-03
1.E-02
1.E-01
1.E+00
1.E-04
Figure 5. Reverse leakage current versus
reverse voltage applied (typical values)
1.E+02
Figure 6. Forward voltage drop versus forward
current (typical values)
10.00
IR(mA)
T
j
=150°C
T
j
=125°C
IFM(A)
1.E+01
T
j
=100°C
1.00
T
j
=125°C
1.E+00
T
j
=75°C
T
j
=25°C
T
j
=100°C
1.E-01
T
j
=50°C
0.10
T
j
=25°C
1.E-02
VR(V)
1.E-03
0
5
10
15
20
25
30
35
40
0.01
0.0
0.1
0.2
0.3
0.4
0.5
VFM(V)
0.6
0.7
DocID16007 Rev 3
3/9
9
Characteristics
1N5822U
Figure 7. Non repetitive surge peak forward current versus number of cycles
100
IFSM(A)
F=50 Hz
T
j initial
=25°C
80
60
40
20
Number of cycles
0
1
10
100
1000
4/9
DocID16007 Rev 3
1N5822U
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Figure 8. Leadless chip carrier 2 (LCC2B) package dimension definitions
A
B
D
Note 1
2
C
1
F
Note 1
Pin 2 Cathode
E
Note 1
E
Pin 1 Anode
H
1
2
r1
G
I
r2
1. The anode is identified by metalization in two top internal angles and the index mark.
DocID16007 Rev 3
5/9
9
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