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SB170_1

产品描述1 A, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小52KB,共2页
制造商Diodes
官网地址http://www.diodes.com/
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SB170_1概述

1 A, SILICON, SIGNAL DIODE

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SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 25A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
High Temperature Soldering: 260°C/10 Second at Terminal
Lead Free Finish, RoHS Compliant (Note 3)
NEW PRODUCT
A
B
A
C
D
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: DO-41
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
¾
Bright Tin. Plated Leads - Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Mounting Position: Any
Ordering Information: See Last Page
Marking: Type Number
Weight: 0.3 grams (approximate)
Dim
A
B
C
D
DO-41
Min
25.4
4.1
0.71
2.0
Max
¾
5.2
0.86
2.7
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 85°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ I
F
= 1.0A
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJL
R
qJA
T
j,
T
STG
SB170
70
49
SB180
80
56
1.0
25
0.80
0.5
10
80
15
50
SB190
90
63
SB1100
100
70
Unit
V
V
A
A
V
mA
pF
K/W
K/W
°C
@ T
A
= 25°C
@ T
A
= 25°C
@ T
A
= 100°C
-65 to +125
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS30116 Rev. 3 - 1
1 of 2
www.diodes.com
SB170 - SB1100
ã
Diodes Incorporated

 
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