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SBL6040PT

产品描述60 A, 40 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小155KB,共4页
制造商Diodes
官网地址http://www.diodes.com/
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SBL6040PT概述

60 A, 40 V, SILICON, RECTIFIER DIODE

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PART OBSOLETE – NO ALTERNATE
PART
SBL6030PT - SBL6060PT
60A SCHOTTKY BARRIER RECTIFIER
Features
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead Free Finish, RoHS Compliant (Note 3)
TO-3P
Dim
Min
Max
A
1.88
2.08
B
4.87
5.13
C
21.25 21.75
D
19.60 20.10
E
2.10
2.40
G
0.51
0.76
H
15.75 16.25
J
1.93
2.18
K
2.90 3.20
L
3.78
4.38
M
5.20
5.70
N
1.12
1.22
P
1.90
2.16
Q
2.93
3.22
R
11.70 12.80
S
4.40 Typical
All Dimensions in mm
H
A
B
OBSOLETE – PART DISCONTINUED
S
R
P
N
J
C
K
L
G
Mechanical Data
Case: TO-3P
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Solderable per MIL-STD-202,
Method 208
Polarity: As Marked on Body
Ordering Information: See Last Page
Marking: Type Number
Weight: 5.6 grams (approximate)
Q
D
E
M
M
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
@ T
C
= 100C
(Note 1)
I
O
I
FSM
V
FM
I
RM
C
T
R
Jc
T
j
,
T
STG
@T
A
= 25°C unless otherwise specified
SBL
6030PT
30
21
SBL
6040PT
40
28
60
500
0.55
20
200
1500
0.5
SBL
6050PT
50
35
SBL
6060PT
60
42
Unit
V
V
A
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage Drop
@ I
F
= 30A, T
C
= 25C
Peak Reverse Current
@ T
C
= 25C
at Rated DC Blocking Voltage
@ T
C
= 100C
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
0.70
V
mA
pF
°C/W
C
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see
EU Directive Annex Notes 5 and 7.
SBL6030PT - SBL6060PT
DS30050 Rev. 6 - 4
1 of 3
www.diodes.com
August 2015
© Diodes Incorporated

SBL6040PT相似产品对比

SBL6040PT SBL6030PT_1 SBL6060PT SBL6050PT
描述 60 A, 40 V, SILICON, RECTIFIER DIODE 60 A, 30 V, SILICON, RECTIFIER DIODE 25 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD 60 A, 50 V, SILICON, RECTIFIER DIODE

 
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