电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SBL1030CT_1

产品描述10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别半导体    分立半导体   
文件大小51KB,共3页
制造商Diodes
官网地址http://www.diodes.com/
下载文档 选型对比 全文预览

SBL1030CT_1概述

10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB

文档预览

下载PDF文档
DISCONTINUED
SBL1030CT - SBL1060CT
10A SCHOTTKY BARRIER RECTIFIER
L
B
C
D
K
A
M
Features
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 3)
TO-220AB
Dim
Min
Max
A
14.48 15.75
B
10.00 10.40
C
2.54
3.43
D
5.90
6.40
E
2.80
3.93
G
12.70 14.27
H
2.40
2.70
J
0.69
0.93
K
3.54
3.78
L
4.07
4.82
M
1.15
1.39
N
0.30
0.50
P
2.04
2.79
All Dimensions in mm
1
2
3
E
G
J
N
Mechanical Data
Case: TO-220AB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: As Marked on Body
Terminals: Finish – Bright Tin. Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Weight: 2.24 grams (approximate)
H H
Pin 1 +
Pin 2 -
Pin 3 +
+
Case
P
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
C
= 95°C
(Note 1)
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
θ
JC
T
j
,
T
STG
@T
A
= 25°C unless otherwise specified
SBL
SBL
SBL
SBL
SBL
SBL
1030CT 1035CT 1040CT 1045CT 1050CT 1060CT
30
21
35
24.5
40
28
10
175
0.55
0.5
50
450
5.5
-65 to +150
0.70
45
31.5
50
35
60
42
Unit
V
V
A
A
V
mA
pF
°C/W
°C
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
Forward Voltage Drop
@ I
F
= 5.0A, T
C
= 25°C
Peak Reverse Current
@ T
C
= 25°C
at Rated DC Blocking Voltage
@ T
C
= 125°C
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance Junction to Case
(Note 1)
Operating and Storage Temperature Range
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see
EU Directive Annex Notes 5 and 7.
DS23048 Rev. 5 - 4
1 of 3
www.diodes.com
SBL1030CT - SBL1060CT
© Diodes Incorporated

SBL1030CT_1相似产品对比

SBL1030CT_1 SBL1040CT SBL1060CT SBL1050CT
描述 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 166  299  829  1125  453  4  7  17  23  10 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved