SBG3030CT - SBG3060CT
30A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 250A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish/RoHS Compliant Version (Note 3)
E
A
4
D
2
PAK
G
H
J
Dim
A
B
C
D
E
G
H
Min
9.65
14.60
0.51
2.29
4.37
1.14
1.14
8.25
0.30
2.03
2.29
Max
10.69
15.88
1.14
2.79
4.83
1.40
1.40
9.25
0.64
2.92
2.79
Mechanical Data
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·
·
·
·
·
·
·
·
Case: D
2
PAK
Case Material
:
Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Solderable per
MIL-STD-202, Method 208
Ordering Information, Page 2
Polarity: See Diagram
Marking: Type Number
Mounting Position: Any
Weight: 1.7 grams (approximate)
B
1
2
3
M
D
C
PIN 1
PIN 3
K
L
PIN 2 & 4
J
K
L
M
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
C
= 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage, per Element
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes:
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJC
T
j,
T
STG
SBG
3030CT
30
21
SBG
3040CT
40
28
SBG
3045CT
45
32
30
250
SBG
3050CT
50
35
SBG
3060CT
60
42
Unit
V
V
A
A
@ I
F
= 15A, T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 100°C
0.55
1.0
75
420
1.5
-65 to +150
0.70
V
mA
pF
K/W
°C
1. Thermal resistance: junction to case mounted on heat sink.
2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS30025 Rev. 5 - 2
1 of 2
www.diodes.com
SBG3030CT - SBG3060CT
ã
Diodes Incorporated
24
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
30
100
I
(AV)
, AVERAGE RECTIFIED CURRENT (A)
10
18
12
1.0
6
0
0
50
100
150
T
C
, CASE TEMPERATURE (
°
C)
Fig. 1 Forward Derating Curve
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
300
I
FSM
, PEAK FORWARD CURRENT (A)
8.3 ms single half-sine-wave
JEDEC method
200
150
C
j
, JUNCTION CAPACITANCE (pF)
250
100
100
50
T
j
= 25
°
C
f = 1.0MHz
0
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
10
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
Ordering Information
Device
(Note 4)
Packaging
D
2
PAK
D
2
PAK
D
2
PAK
D
2
PAK
D
2
PAK
Shipping
800/Tape & Reel, 13-inch
800/Tape & Reel, 13-inch
800/Tape & Reel, 13-inch
800/Tape & Reel, 13-inch
800/Tape & Reel, 13-inch
SBG3030CT-T-F
SBG3040CT-T-F
SBG3045CT-T-F
SBG3050CT-T-F
SBG3060CT-T-F
Notes:
4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30025 Rev. 5 - 2
2 of 2
www.diodes.com
SBG3030CT - SBG3060CT
微控制器 MCU
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