1N914UR
Glass MELF Switching Diode
Qualified per MIL-PRF-19500/116
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
version
DESCRIPTION
This popular 1N914UR JEDEC registered switching/signal diode features internal
metallurgical bonded construction for military grade products per MIL-PRF-19500/116.
Previously listed as a CDLL914 this
small low capacitance diode, with very fast switching
speeds, is hermetically sealed and bonded into a double-plug DO-213AA package. It may be
used in a variety of very high speed applications including switchers, detectors, transient
OR'ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi
also offers a variety of other switching/signal diodes.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
•
•
Surface mount equivalent of popular JEDEC registered 1N914 number.
Hermetically sealed glass construction.
Metallurgically bonded.
Double plug construction.
Very low capacitance.
Very fast switching speeds with minimal reverse recovery times.
JAN, JANTX, and JANTXV qualification is available per MIL-PRF-19500/116.
(See
part nomenclature
for all available options.)
RoHS compliant version available (commercial grade only).
DO-213AA
Package
Also available in:
DO-35 package
(axial-leaded)
1N914
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
High frequency data lines.
Small size for high density mounting using the surface mount method (see package illustration).
RS-232 & RS–422 interface networks.
Ethernet 10 Base T.
Low-capacitance steering diodes.
LAN.
Computers.
MAXIMUM RATINGS
@ 25 ºC
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Ambient
(2)
Thermal Resistance Junction-to-Endcap
Maximum Breakdown Voltage
Working Peak Reverse Voltage
(3)
Average Rectified Current @ T
A
= 75 ºC
Non-Repetitive Sinusoidal Surge Current (tp = 8.3 ms)
Symbol
T
J
& T
STG
R
ӨJA
R
ӨJEC
V
(
BR)
V
RWM
I
O
I
FSM
Value
-65 to +175
325
100
100
75
200
2
Unit
o
C
o
C/W
o
C/W
V
V
mA
A (pk)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
NOTES:
1. T
A
= +75°C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, in still air; pads = .061 inch (1.55 mm) x.105 inch (2.67 mm); R
ӨJA
with a defined PCB
thermal resistance condition included, is measured at I
O
= 200 mA dc.
2. See
Figure 2
for thermal impedance curves.
3. See
Figure 1
for derating.
T4-LDS-0279-1, Rev. 1 (121565)
©2012 Microsemi Corporation
Page 1 of 4
1N914UR
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
•
CASE: Hermetically sealed glass case package.
TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per
MIL-STD-750, method 2026.
POLARITY: Cathode end is banded.
MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/°C. The COE of the mounting
surface system should be selected to provide a suitable match with this device.
MARKING: Part number.
TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
WEIGHT: 0.2 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN 1N914
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial grade
JEDEC type number
(see
Electrical Characteristics
table)
UR
(e3)
RoHS Compliance
e3 = RoHS compliant (on
commercial grade only)
Blank = non-RoHS compliant
MELF Surface Mount
Symbol
I
R
I
O
t
rr
V
F
V
R
V
RWM
SYMBOLS & DEFINITIONS
Definition
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
Reverse Voltage: The reverse voltage dc value, no alternating component.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise noted
FORWARD FORWARD REVERSE FORWARD
VOLTAGE VOLTAGE RECOVERY RECOVERY
V
F2
@
TIME
V
F1
@
TIME
t
rr
t
fr
I
F
=10 mA
I
F
=50 mA
(Note 1)
(Note 2)
V
V
ns
ns
REVERSE
CURRENT
I
R1
@ 20 V
REVERSE
CURRENT
I
R2
@ 75 V
µA
REVERSE
CURRENT
I
R3
@ 20 V
T
A
=150
o
C
µA
REVERSE
CURRENT
I
R4
@ 75 V
T
A
=150
o
C
µA
CAPACI-
TANCE
C
(Note 3)
pF
CAPACI-
TANCE
C
(Note 4)
pF
nA
0.8
1.2
5
20
25
0.5
35
75
4.0
2.8
NOTE 1:
I
F
= I
R
= 10 mA, R
L
= 100 Ohms.
NOTE 2:
I
F
= 50 mA.
NOTE 3:
V
R
= 0 V, f = 1 MHz, V
SIG
= 50 mV (pk to pk).
NOTE 4:
V
R
= 1.5V, f = 1 MHz, V
SIG
= 50 mV (pk to pk).
T4-LDS-0279-1, Rev. 1 (121565)
©2012 Microsemi Corporation
Page 2 of 4
1N914UR
PACKAGE DIMENSIONS
DIM
BD
BL
ECT
S
INCH
MIN
MAX
0.063 0.067
0.130 0.146
0.016 0.022
.001 min
MILLIMETERS
MIN
MAX
1.60
1.70
3.30
3.71
0.41
0.56
0.03 min
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Dimensions are pre-solder dip.
3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
PAD LAYOUT
A
B
C
INCH
.200
.055
.080
mm
5.08
1.40
2.03
T4-LDS-0279-1, Rev. 1 (121565)
©2012 Microsemi Corporation
Page 4 of 4
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