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1N5820_1

产品描述3 A, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小53KB,共2页
制造商Diodes
官网地址http://www.diodes.com/
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1N5820_1概述

3 A, SILICON, RECTIFIER DIODE

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1N5820 - 1N5822
3.0A SCHOTTKY BARRIER RECTIFIERS
Features
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead Free Finish, RoHS Compliant (Note 4)
A
B
A
C
D
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: DO-201AD
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Mounting Position: Any
Marking: Type Number
Ordering Information: See Last Page
Weight: 1.1 grams (approximate)
@ T
A
= 25°C unless otherwise specified
Dim
A
B
C
D
DO-201AD
Min
25.40
7.20
1.20
4.80
Max
¾
9.50
1.30
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
L
= 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
@ T
L
= 75°C
Forward Voltage (Note 2)
Peak Reverse Current
at Rated DC Blocking Voltage (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Notes:
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
R
qJA
R
qJL
T
j,
T
STG
1N5820
20
14
1N5821
30
21
3.0
80
1N5822
40
28
Unit
V
V
A
A
@ I
F
= 3.0A
@ I
F
= 9.4A
@ T
A
= 25°C
@ T
A
= 100°C
0.475
0.850
0.500
0.900
2.0
20
40
10
-65 to +125
0.525
0.950
V
mA
°C/W
°C
1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration pulse test used to minimize self-heating effect.
3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm)
copper pad.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS23003 Rev. 8 - 2
1 of 2
www.diodes.com
1N5820-1N5822
ã
Diodes Incorporated

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