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US1A_1

产品描述1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
产品类别半导体    分立半导体   
文件大小388KB,共3页
制造商Diodes
官网地址http://www.diodes.com/
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US1A_1概述

1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC

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US1A - US1M
1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
Ultra-Fast Recovery Time for High Efficiency
Surge Overload Rating to 30A Peak
High Current Capability
Ideally Suited for Automated Assembly
Lead Free Finish/RoHS Compliant (Note 4)
B
Dim
A
B
C
D
E
G
H
J
SMA
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
Mechanical Data
·
·
·
·
·
·
·
·
Case: SMA
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Lead Free Plating (Matte Tin Finish).
Solderable per MIL-STD-202, Method 208
e
3
Polarity: Cathode Band or Cathode Notch
Marking: Type Number & Date Code: See Page 3
Ordering Information: See Page 3
Weight: 0.064 grams (approximate)
A
C
D
J
H
G
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage (Note 5)
Reverse Recovery Time (Note 2)
Typical Total Capacitance (Note 1)
Typical Thermal Resistance, Junction to Terminal
Operating and Storage Temperature Range
@ I
F
= 1.0A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
qJT
T
j,
T
STG
US1A
50
35
T
A
= 25°C unless otherwise specified
US1B
100
70
US1D
200
140
US1G
400
280
1.0
30
1.0
1.3
5.0
100
50
20
30
-65 to +150
75
10
1.7
US1J
600
420
US1K
800
560
US1M
1000
700
Unit
V
V
A
A
V
mA
ns
pF
°C/W
°C
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Notes:
1.
2.
3.
4.
5.
Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Unit mounted on PC board with 5.0 mm
2
(0.013 mm thick) copper pad as heat sink.
RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see
EU Directive Annex Notes 5 and 7.
Short duration pulse test used to minimize self-heating effect.
DS16008 Rev. 7 - 2
1 of 3
www.diodes.com
US1A - US1M
ã
Diodes Incorporated

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