Product Description
Sirenza Microdevices SNA-500 is a GaAs monolithic broad-
band amplifier in die form. This amplifier provides 19dB of gain
when biased at 65mA and 5.0V.
External DC decoupling capacitors determine low frequency re-
sponse. The use of an external resistor allows for bias flexibility
and stability.
These unconditionally stable amplifiers are designed for use as
general purpose 50 ohm gain blocks. its small size (0.4mm x
0.4mm) and gold metallization make it an ideal choice for use in
hybrid circuits.
The SNA-500 is available in gel paks at 100 devices per con-
tainer. Also available in packaged form (SNA-576 and SNA-
586).
Output Power vs. Frequency
22
20
18
16
14
12
0.1
1
2
3
4
5
SNA-500
DC-3 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
Cascadable 50 Ohm Gain Block
19dB Gain, +18dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Chip Back Is Ground
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
dB
GHz
IF Amplifier
Wireless Data, Satellite
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
2400 M Hz
Sy mbol
P
1dB
Parameter
Output Pow er at 1dB Compression
Units
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
M Hz
Min.
Ty p.
17.6
18.4
18.4
32.5
31.6
31.6
19.6
18.1
17.4
5000
1.4:1
1.4:1
22.3
21.6
21.3
4.0
Max.
OIP
3
Output Third Order Intercept Point
S
21
Bandw idth
VSWR
IN
VSWR
OUT
S
12
NF
V
D
I
D
R
TH
, j-b
Small Signal Gain
(Determined by S
11
, S
22
Values)
Input VSWR
Output VSWR
Reverse Isolation
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction -backsided)
DC-5000 M Hz
DC-5000 M Hz
850 M Hz
1950 M Hz
2400 M Hz
1950 M Hz
-
-
dB
dB
dB
dB
V
mA
o
4.4
58
4.9
65
200
5.4
72
C/W
Test Conditions:
V
S
= 8 V
R
BIAS
= 47 Ohms
I
D
= 65 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102436 Rev A
Preliminary
SNA-500 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25° C (Vds = 5.0V, Ids = 65mA)
|S11| vs. Frequency
0
-5
22
20
18
|S21| vs. Frequency
dB
-10
-15
-20
0.1
1
2
3
4
5
dB
16
14
12
0.1
1
2
3
4
5
GHz
GHz
|S12| vs. Frequency
0
-5
-10
-15
-20
-25
0.1
1
2
3
4
5
0
-5
|S22| vs. Frequency
dB
dB
-10
-15
-20
GHz
0.1
1
2
3
4
5
GHz
Noise Figure vs. Frequency
6
TOIP vs. Frequency
38
36
5
dB
4
dBm
34
32
30
3
0.1
1.0
2
3
4
5
28
0.1
1
2
3
4
5
GHz
GHz
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Pow er
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Absolute Limit
130
mA
6V
+23 dBm
+
200
°C
-40°C to +85°C
+150°C
Max.
Storage Temp
.
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the follow ing expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-102436 Rev A
Preliminary
SNA-500 DC-3 GHz Cascadable MMIC Amplifier
Typical Application Circuit
R
BIAS
1 uF
1000
pF
Application Circuit Element Values
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
C
B
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
C
D
L
C
C
D
L
C
RF in
C
B
1
4
SNA-500
3
C
B
RF out
Recommended Bias Resistor Values for I
D
=65mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
8V
47
9V
62
10 V
82
12 V
110
2
Note: R
BIAS
provides DC bias stability over temperature.
Simplified Schematic of MMIC
(above configuration used for S-parameter data)
Suggested Bonding Arrangement
For recommended handling, die attach, and bonding methods, see the following application note at
www.sirenza.com.
AN-041 (PDF) Handling of Unpackaged Die
Part Number Ordering Information
Caution: ESD sensitive
Part Number
SNA-500
Gel Pack
100 pcs. per pack
Appropriate precautions in handling, packaging
and testing devices must be observed.
Die are shipped per Sirenza application note
AN-039 Visual Criteria For Unpackaged Die
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-102436 Rev A
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