All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
e
N
¯
4
6
1.3
7
7.0
3
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
1
– 0.5
Min
– 25
Typ
– 50
– 10
– 100
22
–6
Max
Unit
V
pA
mA
V
NJ32 Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, I
D
= 1 nA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= 10V, I
D
= 5 mA
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.co
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of V
GS(OFF)
Drain Saturation Current in mA
20
Drain Current in mA
24
Drain Current as a Function of V
GS
V
D
= 15 V
20
16
12
8
4
0
–2
–4
–6
I
DSS
= 24 mA
I
DSS
= 18 mA
I
DSS
= 14 mA
I
DSS
= 10 mA
I
DSS
= 7 mA
15
10
5
0
–1
–2
–3
–4
–5
Gate Source Cutoff Voltage in Volts
Gate Source Voltage in Volts
Input Capacitance vs. Gate Source Voltage
10
8
V
DS
= Ø V
6
4
2
V
DS
= 5 V
V
DS
= 10 V
Feedback Capacitance in pF
Input Capacitance in pF
10
8
6
4
2
Feedback Capacitance vs. Gate Source Volt
V
DS
= Ø V
V
DS
= 5 V
V
DS
= 10 V
0
–4
–8
– 12
0
–4
–8
– 12
– 16
Gate Source Voltage in Volts
Gate Source Voltage in Volts
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
e
N
¯
2.5
3.2
1.7
10
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
–1
0.5
Min
30
Typ
50
1
2
– 15
7
Max
Unit
V
nA
mA
V
PJ32 Process
Test Conditions
I
G
= 1 µA, V
DS
= Ø
V
GS
= 15V, V
DS
= Ø
V
DS
= – 15V, V
GS
= Ø
V
DS
= – 15V, I
D
= 1 nA
V
DS
= – 15V, V
GS
= Ø
V
DS
= Ø, V
GS
= 10
V
DS
= Ø, V
GS
= 10
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 Hz
nV/√HZ V
DS
= 10V, V
GS
= Ø
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.co
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