All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
e
N
¯
8
5
1.5
2.5
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
2
– 0.5
Min
– 25
Typ
– 30
– 10
– 100
40
–6
Max
Unit
V
pA
mA
V
NJ30L Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, I
D
= 1 nA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= 10V, I
D
= 5 mA
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FAX
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Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of V
GS(OFF)
Forward Transconductance in mS
Drain Saturation Current in mA
35
30
25
20
15
10
5
0
–1
–2
–3
–4
–5
–6
10
8
6
Forward Tranconductance vs. Drain Curren
I
DSS
= 10 mA
I
DSS
= 16 mA
I
DSS
= 24 mA
4
2
0.1
1
Drain Current in mA
10
Drain Source Cutoff Voltage in Volts
Input Capacitance as a Function of V
GS
7
Feedback Capacitance in pF
Input Capacitance in pF
6
V
DS
= 5 V
5
V
DS
= 15 V
4
3
2.5
2.0
1.5
1.0
0.5
Feedback Capacitance as a Function of V
G
V
DS
= 5 V
V
DS
= 15 V
0
4
8
12
16
0
–4
–8
– 12
Gate Source Voltage in Volts
Gate Source Voltage in Volts
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