All Bond Pads
≥
0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
e
N
¯
350
160
50
0.7
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
50
– 0.1
Min
– 15
Typ
– 25
– 30
– 100
800
–4
Max
Unit
V
pA
mA
V
NJ1800DL Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 10V, V
DS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= ØV
I
D
= 1 mA, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DG
= 4V, I
D
= 5 mA
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.co
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of V
GS(OFF)
Drain Saturation Current in mA
1000
800
600
400
200
Transconductance in mS
350
300
250
200
150
100
0
–1
–2
–3
–4
0
G
fs
as a Function of I
DSS
20
40
60
Drain Source Cutoff Voltage in Volts
Drain Saturation Current in mA
Noise as a Function of Frequency
3.0
ENoise Voltage in nV/√Hz
Input Capacitance in pF
2.5
2.0
1.5
1.0
0.5
10
100
1K
Frequency in Hz
10K
100K
I
DSS
= 40 mA
V
DG
= 4 V
I
D
= 5 mA
600
500
400
300
200
100
0
Input Capacitance as a Function of V
GS
V
DS
= Ø V
–4
–8
– 12
Gate Source Voltage in Volts
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