All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
e
N
¯
6
4.3
1
4
5.0
1.5
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
2
–1
Min
– 30
Typ
– 40
– 10
– 100
22
–5
Max
Unit
V
pA
mA
V
NJ26 Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 20V, V
DS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, I
D
= 1 nA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= 10V, I
D
= 5 mA
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.co
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of V
GS(OFF)
Drain Saturation Current in mA
Drain Saturation Current in mA
25
20
15
10
5
20
16
12
8
4
I
DSS
as a Function of R
DS
0
–1
–2
–3
–4
–5
–6
100
150
200
250
Gate Source Cutoff Voltage in Volts
Drain Source (ON) Resistance in
Ω
Input Capacitance as a Function of V
GS
5
Input Capacitance in pF
4
3
2
1
V
DS
= Ø V
V
DS
= 15 V
Feedback Capacitance in pF
2.5
2.0
1.5
1.0
0.5
Feedback Capacitance as a Function of V
G
V
DS
= Ø V
V
DS
= 5 V
0
–4
–8
– 12
– 16
0
–4
–8
– 12
Gate Source Voltage in Volts
Gate Source Voltage in Volts
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