All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward Transconductance
NJ14AL Process
Min
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
– 0.5
0.5
10
– 15
Typ
– 22
– 2.0
– 100
–7
20
Max
Unit
V
pA
V
mA
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 10V, V
DS
= ØV
V
GS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= ØV
g
fs
C
iss
e
N
¯
5.5
2.3
0.5
4
mS
pF
pF
V
DS
= 10V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
Common Source Input Capacitance
Equivalent Noise Voltage
Common Source Reverse Transfer Capacitance
C
rss
nV/√HZ V
DS
= 10V, I
D
= 5 mA
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(972) 487-1287
FAX
(972) 276-3375
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Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of V
GS(OFF)
Drain Saturation Current in mA
25
20
15
10
5
Noise Voltage in nV/√Hz
6
Noise as a Function of Frequency
4
V
DG
= 4 V
I
D
= 5 mA
2
0
–1
–2
–3
–4
–5
–6
10
100
1K
Frequency in Hz
10K
Gate Source Cutoff Voltage in Volts
Noise as a Function of Temperature
8
f = 1 kHz
f = 100 kHz
4
Input Capacitance in pF
Noise Voltage in V/√Hz
3.5
3.0
Input Capacitance as a Function of V
GS
6
V
DS
= Ø V
2.5
V
DS
= 5 V
2.0
1.5
2
100
150
200
250
300
350
0
–4
–8
– 12
Temperature (K)
Gate Source Voltage in Volts
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