All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
(pulsed)
g
fs
g
fs
C
iss
C
iss
e
N
¯
15
15
15
3.5
1
mS
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
5
– 0.5
Min
– 15
Typ
– 25
– 50
– 100
100
–7
Max
Unit
V
nA
mA
V
NJ132L Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 10V, V
DS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, V
GS
= ØV
V
DS
= ØV, V
GS
= – 10V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= 4V, I
D
= 5 mA
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.co
Drain to Source Voltage in Volts
Gate Source Voltage in Volts
Transconductance as a Function of Drain Current
50
Transconductance in mS
40
30
I
DSS
= 8 mA
20
10
I
DSS
= 40 mA
20
Capacitance as a Function of Gate Source Volt
C
iss
Capacitance in pF
16
12
8
4
C
rss
0
4
8
12
16
20
0
–2
–4
–6
–8
Drain Current in mA
Gate Source Voltage in Volts
Noise as a Function of Frequency
Equivalent Noise Voltage (nV/√Hz)
Equivalent Noise Voltage (nV/√Hz)
1.5
V
DG
= 4 V
I
D
= 5 mA
1.0
2.0
Noise as a Function of Temperature
f = 1 kHz
1.5
f = 10 kHz
1.0
0.5
0.5
10
100
1K
Frequency in Hz
10K
100K
100
150
200
250
300
Temperature (K)
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