IFN421, IFN422
IFN423, IFN424
IFN425, IFN426
PAD5
VCR7N
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward Transconductance
NJ01 Process
Min
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
– 0.5
0.03
– 40
Typ
– 50
– 0.5
– 10
–6
0.6
Max
Unit
V
pA
V
mA
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 20V, V
DS
= ØV
V
DS
= 10V, I
D
= 1 µA
V
DS
= 10V, V
GS
= ØV
g
fs
C
iss
175
2
0.9
µS
pF
pF
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
C
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(972) 487-1287
FAX
(972) 276-3375
www.interfet.co
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of V
GS(OFF)
Drain Saturation Current in
µA
800
Leakage Current in pA
10k
1k
100
10
1.0
0.1
0
–1
–2
–3
–4
–5
–6
0
Leakage Current as a Function of Temperatu
600
400
200
25
50
75
100
125
Gate Source Cutoff Voltage in Volts
Ambient Temperature
°C
Input Capacitance as a Function of V
GS
4
Feedback Capacitance in pF
Input Capacitance in pF
V
DS
= Ø V
3
V
DS
= 10 V
2
2.0
Feedback Capacitance as a Function of V
G
V
DS
= Ø V
1.5
V
DS
= 10 V
1.0
1
0.5
0.1
1
Gate Source Voltage in Volts
10
20
0.1
1
Gate Source Voltage in Volts
10
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